Reverse‐Bias Electroluminescence in Er‐Doped β‐Ga₂O₃ Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition

Abstract

Strong electroluminescence (EL) of reverse‐biased Er‐doped β‐Ga2O3 Schottky barrier diodes is demonstrated. The devices are prepared by pulsed laser deposition featuring co‐doping of n‐type dopant Si and isovalent Er, while Schottky contacts are formed by Pt‐sputtering. The diodes display a rectification ratio of more than nine orders of magnitude at ±3 V in the virgin state, but under a reverse bias that yields a leakage current density of 0.2–0.4 A cm−2, clearly visible multiband EL emerges. The EL is homogeneously distributed across the diode area, and the peak wavelengths compare well with the reported transition for Er3+.

A Review of β-Ga2O3 Power Diodes

“…Advancements in substrate materials have also facilitated the development of β-Ga 2 O 3 homoepitaxial film technologies. The epitaxial techniques widely employed today include molecular beam epitaxy (MBE) [78][79][80], halide vapor phase epitaxy (HVPE) [81][82][83][84], metal-organic chemical vapor deposition (MOCVD) [85][86][87], pulsed laser deposition (PLD) [88][89][90], low-pressure chemical vapor deposition (LPCVD) [91][92][93], and mist chemical vapor deposition (Mist-CVD) [43,94,95]. Among these, HVPE has been distinguished for achieving high growth rates of approximately 28 µm/h for epitaxial films.…”

Controllable Design of Minority Carrier Diffusion in npn Devices for Enhancing Er3+-Related Electroluminescence

“…The thermionic collision mechanism is one of the effective ways to produce electroluminescence of Er 3+ ions at 1.54 μm. 15,16 Based on this mechanism, various light sources of Er 3+ ions have been developed, including Er-doped insulator devices, 17,18 reverse bias pn junction devices, 19,20 and electronic accelerator layer devices. 21−23 However, these Er-doped thermal electronic devices typically suffer from a high onset voltage issue that induces a strong electric field in certain areas of the device, greatly reducing the operating stability of the devices.…”

“…Due to the stable luminescence in the ultraviolet to infrared bands, rare earth (RE) is frequently used in full-color displays, , phosphors, , and optical communication. − Among RE, erbium (Er) can emit photons at 1.54 μm through the intra-4f radiation transition from 4 I 13/2 to 4 I 15/2 , which is situated in the minimum-loss window of quartz fiber communication. − Because of this, optoelectronics will greatly benefit from the realization of the electroluminescence (EL) associated with Er 3+ ions. The thermionic collision mechanism is one of the effective ways to produce electroluminescence of Er 3+ ions at 1.54 μm. , Based on this mechanism, various light sources of Er 3+ ions have been developed, including Er-doped insulator devices, , reverse bias pn junction devices, , and electronic accelerator layer devices. − However, these Er-doped thermal electronic devices typically suffer from a high onset voltage issue that induces a strong electric field in certain areas of the device, greatly reducing the operating stability of the devices. To achieve the operating stability of devices, it is crucial to find appropriate ways to lower the onset voltage of thermal electronic devices.…”

The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er3+-Doped Ga2O3 Thin Films

“…Ln 3+ -doped Ga 2 O 3 could be promising materials for lasers and amplifiers. So far, Er 3+ -doped Ga 2 O 3 has been developed for electroluminescence (EL) devices, light-emitting devices (LEDs), solid lasers, optical waveguides, and photodetectors [17][18][19][20][21]. In terms of fundamental research and real applications, luminescent thin films are of great importance from both scientific and technological aspects [22].…”