Revealing the weak Fermi level pinning effect of 2D semiconductor/2D metal contact: A case of monolayer In2Ge2Te6 and its Janus structure In2Ge2Te3Se3

Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX3 (X = I, Br)/2D Metal Contacts

“…For example, 2H-MoS 2 -based FETs with 1T-MoS 2 electrodes exhibit a rather low contact resistance, which has been explained by our finding that the SBH values for the 1T/2H MoS 2 contacts are much lower than those for the Au/MoS 2 and Pd/MoS 2 contacts . The weak FLP effect was also revealed in the In 2 Ge 2 Te 6 (or Janus In 2 Ge 2 Te 3 Se 3 ) monolayer contacted with 2D metals with the work function spanning around 2 eV . Moreover, the SBH can be significantly modulated in the multilayer InSe contacted with 2D metals by vdW stacking .…”

“…27 The weak FLP effect was also revealed in the In 2 Ge 2 Te 6 (or Janus In 2 Ge 2 Te 3 Se 3 ) monolayer contacted with 2D metals with the work function spanning around 2 eV. 28 Moreover, the SBH can be significantly modulated in the multilayer InSe contacted with 2D metals by vdW stacking. 17 All these findings showed that 2D metal contacts can greatly reduce the FLP effect, and thus effectively tune the SBH and improve the device performance.…”

The electronic structure and interfacial contact with metallic borophene of monolayer ScSX (X = I, Br, and Cl)

“…6(c). As reported in the previous work, 65,66 changing the interface dipole by varying the interlayer spacing is a very effective strategy to regulate the Schottky barriers. In the experiment, adjusting the interlayer spacing can be realized by a variety of methods, including the nanomechanical pressure, insertion of hexagonal border and nitride (h-BN) dielectric layer, and vacuum thermal annealing.…”

One dimensional MOSFETs for sub-5 nm high-performance applications: a case of Sb2Se3 nanowires

“…[1][2][3][4][5][6][7][8] So far, researchers have found many 2D-based MOSFETs based on their experimental observations and theoretical results. [9][10][11][12][13][14][15][16][17] So what researchers now need to ask is, such MOSFETs can be fabricated in 1D semiconductors? In this context, Qin et al 18 demonstrated tellurium (Te) field-effect transistors with few atomic chains as channels and a diameter of only 2 nm.…”