Revealing the sequence of switching mechanisms in polycrystalline ferroelectric/ferroelastic materials

Domain wall-grain boundary interactions in polycrystalline Pb(Zr0.7Ti0.3)O3 piezoceramics

“…A similar mechanism may be thus inferred also in PZT, i.e., the increased domain wall density ( Figure 2 and Figure 6) may be responsible for the increased domain wall contribution and increased room temperature permittivity at small grain sizes, e.g., via domain wall vibrations under small applied fields. On the other hand, the domain switching process, involving domain nucleation and growth [62], might be more strongly affected by the grain boundaries. As a result, large signal parameters decrease with decreasing grain size.…”

Indirect Electrocaloric Evaluation: Influence of Polarization Hysteresis Measurement Frequency

“…These measurements can be conducted in commercially available systems, thereby making the indirect EC evaluation a popular method. However, the precise determination of is very difficult due to losses like leakage current, the reversible polarization switching induced under the influence of stress constraint, and in particular, the intrinsic dynamic polarization switching behavior of the materials …”

Influence of crystallographic structure on polarization reversal in polycrystalline ferroelectric/ferroelastic materials

“…A detailed description of the experimental setup and the measurement sequence for dynamic polarization and strain measurements is given elsewhere. 20 In order to isolate the switched polarization, ΔP, from other electric contributions, a field sequence containing a switching and a reference measurement was applied. The electrical response during the "switching measurement cycle" (D Sw , electric field antiparallel to the poling direction) contains contributions from the switched polarization, the sample's dielectric displacement, and the integrated leakage current.…”

“…Based on the shape of the S(t) curve, the sequence of switching mechanisms was divided into three regimes. 20 In order to visualize the effect of the crystal structure, these regimes are highlighted in Fig. 4 by numbers for selected measurements with HV pulses of E Sw = 0.967 kV/mm, E Sw = 0.994 kV/mm, and E Sw = 2.006 kV/mm for the R, MPB, and T material, respectively.…”

“…19 Recently, a new measurement method based on timedependent simultaneous polarization and strain measurements was suggested, which allows decrypting the polarization reversal process in more details. 20 Hereafter, non-180°and 180°switching events could be separated and a well-defined sequence was reported containing three regimes of the polarization reversal process. In this work, the same experimental approach is used to address the aforementioned question regarding the influence of the crystal structure on polarization switching dynamics.…”