Revealing quantum effects in highly conductive δ-layer systems

Mamaluy, Denis; Mendez, Juan P.; Gao, Xujiao; Misra, Shashank

doi:10.1038/s42005-021-00705-1

Cited by 10 publications

(24 citation statements)

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“…An accurate computational description of electron tunneling in semiconductor -layer tunnel junctions (such the one shown in Fig. 1 ) is additionally required because the tunneling rate at a -layer junction is affected not only by the gap length and the conductivity of the -layers, but also by quantization of the conduction electrons in energy and space 16 . In this work we employ an efficient computational open-system quantum-mechanical treatment to explore the conductive band structure and the conductive properties of phosphorus -layer systems in silicon (Si:P -layer) for device widths, from nano-scale ( nm) to macro-scale ( m) dimensions, and to analyze the influence of size quantization effects on the conductive properties for sub-12 nm device widths.…”

Section: Introductionmentioning

confidence: 99%

Conductivity and size quantization effects in semiconductor $$\delta$$-layer systems

Mendez

Mamaluy

2022

Sci Rep

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We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus $$\delta$$ δ -layers and P $$\delta$$ δ -layer tunnel junctions in silicon. In order to evaluate size quantization effects on the conductivity, we consider two principal cases: nanoscale finite-width structures, used in transistors, and infinitely-wide structures, electrical properties of which are typically known experimentally. For devices widths $$W<10$$ W < 10 nm, quantization effects are strong and it is shown that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For $$W>10$$ W > 10 nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device values. For tunnel junctions, two distinct conductivity regimes are predicted due to the strong conduction band quantization.

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Section: Introductionmentioning

confidence: 99%

Conductivity and size quantization effects in semiconductor $$\delta$$-layer systems

Mendez

Mamaluy

2022

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“…Realizing broader possible applications for APAM techniques in roomtemperature conventional electronics is a big challenge, as it requires understanding of carrier transport in ultrathin high-density P-doped Si structures. Electronic transport in APAM-doped materials and structures has been investigated and understood at cryogenic conditions (T < 4.2 K) 19 . APAM-doped regions would dominate carrier transport just by virtue of the high APAM doping levels (10 22 cm −3 ), while doping in surrounding Si was kept sufficiently low ( 3 • 10 18 cm −3 , i.e.…”

Section: Introductionmentioning

confidence: 99%

Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy

Basso¹,

Kehayias²,

Henshaw³

et al. 2022

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The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mmfield of view with µm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ∼0.03 A/m, corresponding to a smallest detectable current in the 200 µm-wide APAM ribbon of ∼6 µA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

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“…The electronic structure and conductive properties of Si:P δ -layer systems have been a subject of previous studies based on either effective mass [14][15][16][17], tight-binding [18][19][20][21][22], den-FIG. 1.…”

Section: Introductionmentioning

confidence: 99%

“…sity functional theory [23][24][25] formalisms or semiclassical Boltzmann theory [26]. Recently it has been demonstrated in [15][16][17] that to accurately extract the conductive properties of highly-conductive, highly-confined systems, an open-system quantum-mechanical analysis is necessary. Such open-system treatment, that can be conducted for instance using the Non-Equilibrium Green's Function (NEGF) formalism [27,28], allows to compute the current and conductivity directly from the quantum-mechanical flux, thus avoiding semi-classical approximations, which are intrinsic to the traditional charge self-consistent closed-system or periodic boundary conditions band-structure calculation methods.…”

Section: Introductionmentioning

confidence: 99%

“…An accurate computational description of electron tunneling in semiconductor δ -layer tunnel junctions (such the one shown in Fig. 1) is additionally required because the tunneling rate at a δ -layer junction is affected not only by the gap length and the conductivity of the δ -layers, but also by quantization of the conduction electrons in energy and space [16]. An application of a full open-system quantum-mechanical treatment to δ -layer tunnel junctions was not possible until now, due to prohibitively high computational costs.…”

Section: Introductionmentioning

confidence: 99%

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Conductivity and size quantization effects in semiconductor δ-layer systems

Granado

Mamaluy

2022

Preprint

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We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus δ-layers and P δ-layer tunnel junctions in silicon. In order to evaluate size quantization effects on the conductivity, we consider two principal cases: nanoscale finite-width structures, used in transistors, and infinitely-wide structures, electrical properties of which are typically known experimentally. For devices widths W < 10nm, quantization effects are strong and it is shown that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For W > 10nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device values. For tunnel junctions, the quantization of the conduction band leads to deviations from the exponential dependence of the current on the tunnel gap length for low applied biases (≤10mV).

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Revealing quantum effects in highly conductive δ-layer systems

Cited by 10 publications

References 50 publications

Conductivity and size quantization effects in semiconductor $$\delta$$-layer systems

Conductivity and size quantization effects in semiconductor $$\delta$$-layer systems

Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy

Conductivity and size quantization effects in semiconductor δ-layer systems

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