Retracted: “Multiscale Multiphysics Modeling, Analysis, Simulation, and Fabrication of Carbon Nanotube-Based Integrated Power Inductor for System On-Chip With Magnetic Cores” [ASME Journal of Energy Resources Technology, 2012, 134(4), p. 042002]

Abstract

The magnetics of power electronics has particular potential for improvement, as these components are typically the largest and volumétrica I ly inefficient in a power circuit. Nowadays, the trend is to develop multiscale multiphysics structures to yield peiformance characteristics favorable in power electronic devices and power converters' applications. As tire dimensions of materials are reduced to the nanometer realm, they often exhibit novel and interesting behavior, which constitute the basis for a new generation of electronic devices. Nanoparticles physical and chemical properties behavior is unique and peculiar compared to conventional or classical materials, for instance, silicon is a semiconductor wiiile silicon nanowire is a good conductor. Hence, the exploitation and exploration of nanotechnology is critical to achieving reliable nanometer-based power devices with small footprint and reduced power consumption, among others. Nanotechnology-based power inductor that utilizes hundledmultiwalled carbon nanotubes and thin magnetic plates as cores can provide higii-powerdensity, low-power-loss, and high performance in a small size for system on-chip (SoC). The bundled-multiwalled carbon nanotubes based power inductor with single-layer and three turns occupies an area of 0.1225 mm^ exhibits an inductance of 263 nH, a quality factor of 771 at 20MHz, and a dc rated current of 200 inA. The fabrication, design, analysis, multiscale multiphysics modeling, and simulation results oftiie bundled-multiwalled carbon nanotubes based power inductor are presented.

Fabrication of Carbon-Nanotube-Based Integrated Power Inductor With Dual Conduction Mechanism

“…ANSYS/MAXWELL 3-D simulation software does not account for the quantum effects and the organic conduction mechanism in CNTs. The multiscale multiphysics simulation and programming methodology to account for the aforementioned effects was published in [7] and [8]. Since the modeling methodology is a lengthy and intricate process, the reader is referred to [7] and [8] as well as to [16]- [18] to gain understanding of the programming scheme.…”

“…The multiscale multiphysics simulation and programming methodology to account for the aforementioned effects was published in [7] and [8]. Since the modeling methodology is a lengthy and intricate process, the reader is referred to [7] and [8] as well as to [16]- [18] to gain understanding of the programming scheme. The simulations results of the BMWCNT-based power induc -TABLE III MEASURED VERSUS SIMULATED VALUES OF RECTANGULAR-SPIRAL INDUCTOR tor are obtained based on peak-to-peak current of 300 mA.…”

“…The magnetic inductance is assigned to the CNTs and the substrate. Magnetic inductance depends on the current loops formed by the bundles and, therefore, is highly dependent on the geometry of the BMWCNT-based power inductor [7]- [12], as shown (2)-(4), at the top of the next page, where n is the number of turns, d o the outer diameter of the spiral, d i the inner diameter of the spiral, d BMWCNT the overall diameter of the bundled cylindrical tubes, s the spacing between the segments, n the number of turns, ρ CNT the resistivity of the CNTs (0.34 × 10 −6 Ω·cm [9]), d BMWCNT the diameter of the CNT-bundle, a and b the rectangular dimensions of the cross section, L s the self-inductance, l SWCNT the length of the spiral as expressed in (4), and γ is the geometric mean distance (GMD), which is 0.46 times a side for a square or rectangular cross section and 0.25 times the length for a straight-line cross section. Since the skin depth phenomenon has little effect on CNTs power inductor, τ should be considered to have a value of 1 for high frequencies (greater than 50 MHz).…”

“…The pad parasitics were then de-embedded from the overall inductor characteristic by subtracting the Y -parameters of the pads from the Y -parameters of the embedded inductors. The equivalent circuit model [7] is used to extract the electrical parameters such as inductance and quality factor using…”