RETRACTED ARTICLE: Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities

Abstract

With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special filling-into-microcavities structure of HfO2 leads to the presence of ferroelectricity, which greatly enhances the blue emission from porous silicon. Since both HfO2 and Si are highly compatible with Si-based electronic industry, combined the low-cost and convenient process, the HfO2-filled porous Si shows a promising application prospect.

Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO2 thin film

“…Current was ceased during the off period of the pulses, which is consistent with previous reports. HfO 2 with different oxygen (oxygen vacancy) content has ever been shown the surprising properties such as p-type conductivity 24 , luminescence 25 , ferroelectricity 26 , 27 , intrinsic d 0 magnetism 28 , excellent buffer function 29 and so on. Actually, we have also published several works about the ferroelectric behavior of highly oxygen-deficient HfO 2 dielectric films (OD-HfO 2 ) recently 30 , 31 .…”

Photoluminescence Emission Control of Porous Silicon

“…So far no other materials achieve perfect commercial applications as Si. But, Si is hardly photoluminescence emission with respect to other materials, such as InGaAs, as a result of its indirect band gap [1]. On the other hand, the finding of photoluminescence in porous silicon has sparked the hope for silicon as a material also for optoelectronic applications.…”