2019
DOI: 10.1007/s10825-019-01395-3
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RETRACTED ARTICLE: An analytical model for the effects of the variation of ferroelectric material parameters on the minimum subthreshold swing of NC-FETs

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Cited by 4 publications
(2 citation statements)
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“…According to the numerical values and experimental results given in the literature, the results are statistically significant. In addition, in the field of semiconductor manufacturing technology, various ferroelectric materials used in NC-FET gate components have achieved minimum subthreshold swing [11]. Dusthakar et al's current contribution involves the development of a laminate-based model that aims to study the behavior of single crystal and polycrystalline tetragonal ferroelectric materials.…”
Section: Introductionmentioning
confidence: 99%
“…According to the numerical values and experimental results given in the literature, the results are statistically significant. In addition, in the field of semiconductor manufacturing technology, various ferroelectric materials used in NC-FET gate components have achieved minimum subthreshold swing [11]. Dusthakar et al's current contribution involves the development of a laminate-based model that aims to study the behavior of single crystal and polycrystalline tetragonal ferroelectric materials.…”
Section: Introductionmentioning
confidence: 99%
“…In our simulation, Cfe is not a fixed value, and it is calculated by solving self-consistently the Landau-Khalatnikov equation, which guarantees the accuracy of the simulation results. |Cfe| is estimated by equation ( 9) when P is considered independent of its size [39,40]. In equation ( 9), the Afe refers to the capacitance area.…”
Section: Theory and Model Of Nc-finfetmentioning
confidence: 99%