Retention Reliability Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with N₂O Oxidation Tunnel Oxide

Abstract

A reverse-tilt-domain boundary wall in a polymer-encapsulated nematic liquid crystal was examined. A boundary wall in which the liquid crystal director was nearly planar midway through the wall was formed during UV polymerization; it remained stable even though the liquid crystal molecules in neighboring domains are nearly vertically aligned. The formation of the boundary wall was found to be suppressed by the oblique irradiation with linearly polarized UV light. #

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

“…The reason may be the surface roughness. A rough surface can reportedly induce interface states, lowering the interface barrier [37][38][39][40]. Consequently, the leakage current can be enhanced at a rough surface but not at a smooth one.…”