Retention Model for High-Density ReRAM

Wei, Zhiqiang; Takagi, Toshihisa; Kanzawa, Yuchi; Katoh, Y.; Ninomiya, T.; Kawai, K.; Muraoka, S.; Mitani, S.; Kawasaki, Koji; Fujii, Satoshi; Miyanaga, Ryouko; Kawashima, Y.; Mikawa, Takumi; Shimakawa, K.; Aono, K.

doi:10.1109/imw.2012.6213638

Cited by 50 publications

(46 citation statements)

References 5 publications

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“…From high resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) measurements, 6,[8][9][10]13 the switching mechanism is believed to involve the formation of a conductive filament of oxygen vacancies across the oxide thin film. However, there is still limited understanding of the energetics of the relevant atomic processes involved for materials selection.…”

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confidence: 99%

Materials selection for oxide-based resistive random access memories

Guo

Robertson

2014

Applied Physics Letters

105

103

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confidence: 99%

Materials selection for oxide-based resistive random access memories

Guo

Robertson

2014

Applied Physics Letters

105

103

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“…One of the most promising emerging non-volatile memory with computation capabilities is Resistive RAM (ReRAM). ReRAMs offer fast read/write speeds [8], high endurance [9], long retention times [10] along with the scope of 3D fabrication [11]. Large passive crossbar arrays can be enabled by preventing parasitic currents by means of devices such as a select device in series to a switch (1S1R) or a Complementary Resistive Switch (CRS) [12].…”

Section: Introductionmentioning

confidence: 99%

Crossbar-Constrained Technology Mapping for ReRAM Based In-Memory Computing

Bhattacharjee

Tavva

Easwaran

et al. 2020

IEEE Trans. Comput.

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In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption compared to the standard CMOS storage devices. As a result, researchers have explored the mapping and design of diverse applications, ranging from arithmetic to neuromorphic computing structures to ReRAM-based platforms. ReVAMP, a generalpurpose ReRAM computing platform, has been proposed recently to leverage the parallelism exhibited in a crossbar structure. However, the technology mapping on ReVAMP remains an open challenge. Though the technology mapping with device/areaconstraints have been proposed, crossbar constraints are not considered so far. In this work, we address this problem. Two technology mapping flows are proposed, considering different runtime-efficiency trade-offs. Both the mapping flows take crossbar constraints into account and generate feasible mapping for a variety of crossbar dimensions. Our proposed algorithms are highly scalable and reveal important design hints for ReRAMbased implementations.

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“…[ 1 ] Both, valence change memories (VCM) and electrochemical metallization cells (ECM) offer excellent endurance, [ 2,3 ] retention, [ 4,5 ] and scaling properties. [ 6,7 ] Implementing those devices as junctions of passive crossbar arrays enables 4F 2 passive crossbar arrays, which lead to ultimately scalable devices, at each cross-point junction.…”

Section: Introductionmentioning

confidence: 99%

Realization of Boolean Logic Functionality Using Redox‐Based Memristive Devices

Siemon

Breuer

Aslam

et al. 2015

Adv Funct Materials

132

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Emerging resistively switching devices are thought to enable ultradense passive nanocrossbar arrays for use as random access memories (ReRAM) by the end of the decade, both for embedded and mass storage applications. Moreover, ReRAMs offer inherent logic‐in‐memory (LIM) capabilities due to the nonvolatility of the devices and therefore great potential to reduce the communication between memory and calculation unit by alleviating the so‐called von Neumann bottleneck. A single bipolar resistive switching device is capable of performing 14 of 16 two input logic functions in the logic concept presented by Linn et al. (“CRS‐logic”). In this paper, five types of selectorless devices are considered to validate this CRS‐logic concept is experimentally by means of the IMP and AND logic operations. As reference device a TaO x ‐based ReRAM cell is considered, which is compared to three more advanced device configurations consisting either of a threshold supported resistive switch (TS‐ReRAM), a complementary switching device (CS), or a complementary resistive switch (CRS). It is shown that all of these devices offer the desired LIM behavior. Moreover, the feasibility of XOR and XNOR operations using a modified logic concept is applied for both CS and CRS devices and the pros and cons are discussed.

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Retention Model for High-Density ReRAM

Cited by 50 publications

References 5 publications

Materials selection for oxide-based resistive random access memories

Materials selection for oxide-based resistive random access memories

Crossbar-Constrained Technology Mapping for ReRAM Based In-Memory Computing

Realization of Boolean Logic Functionality Using Redox‐Based Memristive Devices

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