Results on radiation tolerance of diamond detectors

Venturi, N.; Alexopoulos, Andreas V.; Artuso, M.; Bachmair, F.; Bäni, L.; Bartosik, M.; Beacham, J. B.; Beck, H. C.; Bellini, Vincenzo; Belyaev, V.; Bentele, B.; Bergonzo, P.; Bès, A.; Brom, J.-M.; Bruzzi, M.; Chiodini, G.; Chren, D.; Cindro, V.; Claus, G.; Collot, J.; Cumalat, J. P.; Dabrowski, A.; D’Alessandro, R.; Dauvergne, D.; Boer, W. De; Dorfer, C.; Dünser, M.; Eremin, V.; Forcolin, G. T.; Forneris, J.; Gallin-Martel, L.; Gallin-Martel, M.-L.; Gan, K. K.; Gastal, M.; Giroletti, C.; Goffe, Mathieu; Goldstein, J.; Голубев, А. А.; Gorišek, A.; Grigoriev, E.; Große-Knetter, J.; Grummer, A.; Gui, B.; Guthoff, M.; Haughton, I.; Hiti, B.; Hits, D.; Hoeferkamp, M. R.; Hofmann, Thomas; Hosslet, J.; Hostachy, J-Y.; Huegging, F.; Hutton, C.; Janssen, J.; Kagan, H.; Kanxheri, K.; Kasieczka, G.; Kass, R.; Kassel, F.; Kiš, M.; Kramberger, G.; Kuleshov, S.; Lacoste, A.; Lagomarsino, S.; Giudice, A. Lo; Lukosi, Eric; Maazouzi, C.; Mandić, I.; Mathieu, C.; Menichelli, M.; Mikuž, M.; Morozzi, A.; Moss, J.; Mountain, R.; Murphy, S.; Muškinja, M.; Oh, A.; Olivero, P.; Passeri, D.; Pernegger, H.; Perrino, R.; Picollo, F.; Pomorski, M.; Potenza, R.; Quadt, A.; Re, Alessandro; Reichmann, M.; Riley, G.; Roe, S.; Sanz, D.; Scaringella, M.; Schaefer, D.; Schmidt, C.; Smith, D. S.; Schnetzer, S.; Sciortino, S.; Scorzoni, A.; Seidel, S. C.; Servoli, L.; Sopko, B.; Sopko, V.; Spagnolo, S.; Spanier, S.; Stenson, K.; Stone, R.; Sutera, C.; Taylor, A. C.; Tannenwald, B. B.; Traeger, M.; Tromson, D.; Trischuk, W.; Tuvé, C.; Velthuis, J. J.; Vittone, E.; Wagner, S. R.; Wallny, R.; Wang, J. C.; Weingarten, J.; Weiß, C.; Wengler, T.; Wermes, N.; Yamouni, M.; Zavrtanik, M.

doi:10.1016/j.nima.2018.08.038

Cited by 9 publications

(8 citation statements)

References 5 publications

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“…The CCE measurements are compared with studies on crystal radiation hardness by RD42‐collaboration in Figure . The measured relative CCE is obtained from the spectra in Figure b, b, and .…”

Section: Resultsmentioning

confidence: 99%

“…In the case of single crystal CVD diamond, one can assume that λ 0 is large enough that the first term is negligible. The CCE obtained with radiation damage constant for 24 GeV protons

k = false(0.67 \pm 0.04 false) \times 10^{- 18}

cm 2 μm −1 together with single carrier Hecht equation (Equation ) is used as a prediction for charge collection reduction due to damage to the crystal and is plotted together with the measurement data in Figure . Based on the CCE of the measurements, one can calculate the effective mean free path

λ_{e f f} = false(71 \pm 1 false)

μm and damage constant

k_{e f f} = false(3.2 \pm 0.2 false) \times 10^{- 18}

cm 2 μm −1 .…”

Section: Resultsmentioning

confidence: 99%

“…The collected charge normalized with charge collection prior to irradiation as a function of proton fluence for a) alpha and b) MIP‐like particles. Measured values are compared with the prediction based on the Hecht equation (Equation and ) and literature values by RD42, where the electron and hole charge carrier lifetimes τ e and τ h are assumed equal. For alpha particles is also presented a case, where charge carrier lifetimes are different and positive bias is used (i.e., the electron drift through the bulk).…”

Section: Resultsmentioning

confidence: 99%

“…The relation between radiation damage, in terms of delivered fluence Φ , and mean free path of the charge carriers λ is given by

\frac{1}{λ} = \frac{1}{λ_{0}} + k Φ

where λ 0 is the mean free path before the irradiation. The radiation damage constant for 24 GeV protons has been determined by the RD42‐collaboration . In case of high purity single crystal CVD diamonds, such as that used in this study, the λ 0 is much longer than the crystal thickness.…”

Section: Charge Collection Efficiency Calculationsmentioning

confidence: 99%

“…The radiation hardness of diamond sensors has been extensively studied on the crystal level by the RD42 – collaboration . To mitigate the interface trapping, the electrodes have been (re)processed after irradiation.…”

Section: Introductionmentioning

confidence: 99%

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Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles

Naaranoja

Golovleva

Gädda

et al. 2019

Physica Status Solidi (a)

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The radiation hardness of diamond at the sensor level is studied by irradiating five sensors and studying them with various particle sources, without making any modifications to the sensors in between. The electronics used in the characterization is not irradiated to ensure that any observed effect is merely due to the sensor. Three sensors have received a fluence of 10 14 protons cm À2 and two 5⋅10 15 protons cm À2 . At the lower fluence, the impact on the charge collection efficiency is very small, when the applied bias voltage is above 1 V μm À1 . For the higher fluence, the charge collection efficiency is lower than expected based on earlier studies of diamond radiation hardness on the substrate level. Furthermore, it is noticed that the irradiation has a stronger impact on the signal amplitude recorded with a fast timing than with a charge sensitive amplifier.

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Section: Resultsmentioning

confidence: 99%

“…In the case of single crystal CVD diamond, one can assume that λ 0 is large enough that the first term is negligible. The CCE obtained with radiation damage constant for 24 GeV protons