Results of radiation hardness tests of GaAs solid-state detectors

Beaumont, S. P.; Nuti, Marco; O'Shea,; Bertin, R.; Lisowski, B.; Skillicorn, I. O.; Papa, C. Del; Raine, C.; Edwards, M.; Smith, K.; Pelfer, P. G.; Turnbull, R.M.; Fiori, F.; Zichichi, A.; D’Auria, S.; Linch, J C

doi:10.5170/cern-1990-010-v-3.725

1990

DOI: 10.5170/cern-1990-010-v-3.725

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Results of radiation hardness tests of GaAs solid-state detectors

S. P. Beaumont¹,

Marco Nuti²,

O'Shea O'Shea³

et al.

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“…The main advantages of GaAs in comparison to silicon are its high radiation hardness, fast reaction rate and also well-developed technology of preparation, and therefore GaAs is suitable for high radiation and high rate environments. Radiation hardness of GaAs detectors against various types of ionizing radiation has been studied since 90-ties [8][9][10]. GaAs detectors exhibit better radiation hardness against neutrons compared to silicon [8], which makes them more favourable for neutron detection.…”

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Semi-insulating GaAs based detector of fast neutrons produced by D–T nuclear reaction

et al. 2016

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We have examined semi-insulating (SI) GaAs detectors with high density polyethylene (HDPE) conversion layer by a mono-energetic neutrons with kinetic energy of 16.755 MeV generated by a deuterium -tritium nuclear reaction. First, the influence of HDPE layer thickness on the relative detection efficiency of fast neutrons was studied. The MCNPX (Monte Carlo N-particle eXtended) code has been used to support the analysis of the experiment. The theoretical optimum thickness of the conversion layer was determined to 1.9 mm using the MCNPX code. The HDPE conversion layers of various thicknesses, in the range from 50 µm to 3200 µm, were glued on the top Schottky contact of SI GaAs detector in the experiment. The neutron detection efficiency was evaluated from measured spectra and compared to results from simulations. The experimental data showed very good agreement with simulation results. Then the effect of active detector thickness modified by detector reverse bias on neutron detection efficiency was studied. Finally, the effect of the angle of irradiation on neutron detection efficiency was evaluated exhibiting decreasing tendency with increasing deviation from perpendicular direction of impinging neutrons.

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“…Radiation hardness of GaAs detectors against various types of ionizing radiation has been studied since 90-ties [8][9][10]. GaAs detectors exhibit better radiation hardness against neutrons compared to silicon [8], which makes them more favourable for neutron detection.…”

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confidence: 99%

Semi-insulating GaAs based detector of fast neutrons produced by D–T nuclear reaction

et al. 2016

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Gallium arsenide for vertex detectors

D’Auria

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Viá

et al. 1997

Nuclear Instruments and Methods in Physics Research Section A:

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Results of radiation hardness tests of GaAs solid-state detectors

Cited by 2 publications

References 0 publications

Semi-insulating GaAs based detector of fast neutrons produced by D–T nuclear reaction

Semi-insulating GaAs based detector of fast neutrons produced by D–T nuclear reaction

Gallium arsenide for vertex detectors

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