Restorable Type Conversion of Carbon Nanotube Transistor Using Pyrolytically Controlled Antioxidizing Photosynthesis Coenzyme

Abstract

Here, a pyrolytically controlled antioxidizing photosynthesis coenzyme, β‐Nicotinamide adenine dinucleotide, reduced dipotassium salt (NADH) for a stable n‐type dopant for carbon nanotube (CNT) transistors is proposed. A strong electron transfer from NADH, mainly nicotinamide, to CNTs takes place during pyrolysis so that not only the type conversion from p‐type to n‐type is realized with 100% of reproducibility but also the on/off ratio of the transistor is significantly improved by increasing on‐current and/or decreasing off‐current. The device was stable up to a few months with negligible current changes under ambient conditions. The n‐type characteristics were completely recovered to an initial doping level after reheat treatment of the device.

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

“…The inverter demonstrated a very high noise margin of 28 V at a supply voltage of 80 V (70% of 1/2V DD ) and a gain of 85 (Fig. 4C), values that were not achieved for previously reported SWNT CMOS inverters (14,30,32). Our obtained noise margin value indicates that even if the noise causes the input voltage shift of 28 V at each direction, the inverter can still produce the correct output signal.…”

“…The advantages of CMOS circuits compared with unipolar logic circuits include lower power consumption, simpler circuit design, higher noise margin, better tolerance to the spread of threshold voltages of the transistors, and consequently higher circuit yields (15-17). Several approaches have been reported to adjust the threshold voltage of SWNTs and enable n-type SWNT transistors, including the use of (i): low-work function metal as source/drain contacts (20-22), (ii) atomic layer deposited (ALD) high-κ oxide on the SWNTs (23), and (iii) chemical doping on either the contacts or the bulk of SWNTs (14,(24)(25)(26)(27)(28)(29)(30)(31)(32). However, the continuous and reliable tuning of the threshold voltage of SWNT TFTs has not been achieved, thereby hindering optimal SWNT circuit performance.…”

Strategy for Carrier Control in Carbon Nanotube Transistors

“…The oxidation of NADH was confirmed by using UV adsorption spectroscopy ( Figure S2). The NADH-doped CNT-FET is also stable under ambient conditions for up to 55 days (Figure 12 b), [69] and even after 100 days, the device displays ntype characteristics, as shown in Figure 12 c. Interestingly, after heating the sample to 150 8C, the device fully recovers the ntype behavior. This remarkable reversibility may originate from protective layers formed by the bulky ADP and Ribose in NADH, preventing ambient gases from being adsorbed because of steric hindrance ( Figure S3).…”

“…Inspired by this, various gases, molecules, and polymers have been attached to the CNT surface. [35][36][37][38][39][40][68][69][70][71][72][73][74][75][76][77][78][79][80] The direction of the resulting charge transfer could be determined using several parameters. Various methods for the identification of the type and the degree of doping were suggested.…”

Theoretical study of the adsorption energy of some linear saturated hydrocarbons on SWCNT: DFT calculations

“…Boron and Nitrogen molecules are substitute for carbon atoms in a CNT wall to create p-type and n-type semiconductors in inplane doping [4,11]. In exohedral doping, organic or inorganic molecules are physically or chemically absorbed into a wall of an CNT [10,[12][13][14][15][16]. Exohedral doping is the most flexible method because it capable of using a wide range of substances such as alkaline, halogens and organic molecules.…”