2019
DOI: 10.1016/j.cell.2019.06.031
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Resting-State Structure and Gating Mechanism of a Voltage-Gated Sodium Channel

Abstract: Highlights d Voltage shifting and disulfide locking capture a resting-state structure of Na V Ab d Three gating charges translocate intracellularly through transmembrane electric field d Voltage sensor couples to pore opening by an elbow connecting S4 to the S4-S5 linker d Resting-state structure supports a sliding helix mechanism of gating

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Cited by 160 publications
(249 citation statements)
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References 83 publications
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“…11a and ligand-receptor in Fig. 11b) may coexist: the interaction between S4-S5 L and S6 T suggested in the closed state (recent work of Wisedchaisri et al on the bacterial channel Na V Ab 19 ) may completely reconfigure in the open state (studies on NavMs 8,16,17 , and also the present study on Na V Sp1 and Na V 1.4). Interestingly, S4-S5 L residues implicated in the interaction with S6 T in the Na V Ab closed state (highlighted in Supplemental Fig.…”
Section: Discussionsupporting
confidence: 51%
See 1 more Smart Citation
“…11a and ligand-receptor in Fig. 11b) may coexist: the interaction between S4-S5 L and S6 T suggested in the closed state (recent work of Wisedchaisri et al on the bacterial channel Na V Ab 19 ) may completely reconfigure in the open state (studies on NavMs 8,16,17 , and also the present study on Na V Sp1 and Na V 1.4). Interestingly, S4-S5 L residues implicated in the interaction with S6 T in the Na V Ab closed state (highlighted in Supplemental Fig.…”
Section: Discussionsupporting
confidence: 51%
“…the activation gate is closed. Upon membrane depolarization, constriction is relieved, and channel activation gate can open 10,12,15,[19][20][21] . On the other hand, other studies performed on the bacterial Na V Ms (from Magnetococcus marinus) channel suggest that the S4-S5 L may also be involved in an interaction motif stabilizing the channel open state 8,16,17 .…”
mentioning
confidence: 99%
“…Importantly, Kv1.2/2.1 and Na V Ab structures showed the S4 segment in nearly identical positions (Long et al, 2007;Payandeh et al, 2011), confirming the vertical position of the S4 segment in the activated state. Countercharge to S4 arginine residue interactions have been revealed with crystallographic data from Na V Ab, Na V Rh, and Na V Ms (Payandeh et al, 2011;Payandeh et al, 2012;Zhang et al, 2012;Sula et al, 2017;Wisedchaisri et al, 2019). It has also been hypothesized that negatively charged residues tune the hydrophilicity of the inner and outer vestibules of the VSD (Palovcak et al, 2014), while the central, hydrophobic region separates these vestibules and focuses the electric field (Starace and Bezanilla, 2004;Ahern and Horn, 2005;Chanda and Bezanilla, 2008;Lacroix et al, 2014).…”
Section: Structural Studies Illuminate Voltage Sensor Topology and Elmentioning
confidence: 97%
“…Together with a negatively charged residue on S3 helix, F3 and E4 on S2 form the so-called charge transfer center (CTC) at the bottom of VS (Tao et al, 2010). The S4 helix of functional VS is in the "down" conformation due to the negative voltage at resting membrane potential, while at depolarizing potential, S4 helix moves "up" in response to the changes of electrostatic field (Lee and MacKinnon, 2019;Wisedchaisri et al, 2019). In contrast to the canonical voltage-gated ion channels, some of the voltage sensors of NALCN are degenerated due to mutations of key residues in either charge-transfer center on S2 or gating charges on S4.…”
Section: Conformations Of Degenerated Voltage Sensors At Depolarizingmentioning
confidence: 99%