Response to Comment on ‘Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned <i>p</i>-type GaN surfaces’ [J. Appl. Phys. 91, 732 (2002)]

Hartlieb, P. J.; Roskowski, A. M.; Davis, R. F.; Platow, W.; Nemanich, R. J.

doi:10.1063/1.1542911

Cited by 17 publications

(29 citation statements)

References 4 publications

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“…Bermudez, 20 Dhesi et al, 21 and Wu and Kahn 9 have reported that a clean GaN (1ϫ1) surface prepared by N ϩ sputtering and hightemperature annealing ͑900°C͒ showed a strong surface state contribution to ultraviolet photoemission spectroscopy ͑UPS͒ spectra at or near the VBM. Hartlieb et al 10 also showed a similar UPS spectrum of the GaN surface annealed in NH 3 at 825-860°C ͓chemical vapor clean ͑CVC͒ process͔. They argued that such surface states are intrinsic, and probably originate from surface dangling bonds.…”

Section: Resultsmentioning

confidence: 71%

“…% from the O 1s integrated intensity and the corresponding XPS sensitivity factor. Dhesi et al, 21 Wu and Kahn, 9 and Hartlieb et al 10 have reported similar concentrations of residual oxygen on GaN surfaces after the cleaning processes. In addition, the peak intensity of the Mg 1s level on the N 2 -plasma treated surface was below the limit of detection.…”

Section: B Effects Of Ecr N 2 -Plasma Treatmentmentioning

confidence: 78%

“…For the air-exposed surface, the extrinsic surface states near midgap may be more dominant than the intrinsic states at or near the VBM. 10 The change in band bending, V BD , as a function of the Mg doping density is plotted in Fig. 7͑b͒.…”

Section: Resultsmentioning

confidence: 99%

“…Ziemann and Castleman 30 suggested a similar evaporation or desorption process of MgO clusters based on their mass-spectroscopic study. Figure 10 shows a valence band spectrum of a p-GaN 10 reported large band bending of more than 1.0 eV even at oxide-and contamination-free p-GaN surfaces. This indicated that removal of an oxide layer from the surface is not directly connected with making the surface free of surface states.…”

Section: B Effects Of Ecr N 2 -Plasma Treatmentmentioning

confidence: 99%

“…Wu and Kahn 8,9 and Hartlieb et al 10 prepared oxide-and contamination-free p-GaN surfaces by the N ϩ sputtering process combined with high-temperature annealing and an ammonia-based hightemperature chemical vapor process, respectively. On those clean surfaces, however, they found the large band bending of more than 1.0 eV is probably due to the existence of surface states.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface

Hashizume

2003

Journal of Applied Physics

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Chemical and electronic properties of Mg-doped p-GaN surfaces were systematically investigated by x-ray photoelectron spectroscopy ͑XPS͒ and Auger electron spectroscopy ͑AES͒. The doping density of Mg ranged from 3ϫ10 19 to 9ϫ10 19 cm Ϫ3 . The XPS and AES analyses revealed the accumulation of Mg for all the air-exposed and chemically treated p-GaN surfaces. The apparent density of Mg calculated from the XPS integrated intensity and the AES intensity was more than one order higher than the value in bulk determined by secondary ion mass spectroscopy. Mg accumulation as well as large amounts of oxides made up the disordered region on the p-GaN:Mg surfaces. Large surface band bending of 1.2-1.6 eV was found at the p-GaN surfaces even after treatment in KOH and NH 4 OH solutions, due to the existence of high-density surface states. It was found that electron cyclotron resonance assisted N 2 -plasma treatment at 300°C for 1 min is very effective in removing such surface disordered regions and reducing surface band bending.

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Section: Resultsmentioning

confidence: 71%

Section: B Effects Of Ecr N 2 -Plasma Treatmentmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

Section: B Effects Of Ecr N 2 -Plasma Treatmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface

Hashizume

2003

Journal of Applied Physics

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TiO thin films on GaN(0001)

Wasielewski

Mazur

Grodzicki

et al. 2015

Physica Status Solidi (b)

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Physical features of titanium monoxide layers deposited on pGaN(0001) substrate are reported in this paper. TiO was deposited under ultrahigh vacuum at room temperature. As revealed by scanning tunneling microscopy (STM) the deposit had grainy structure. The X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) studies have shown that, depending on the altered by annealing morphology of the TiO-based film, work function of the system underwent changes and electronic structure of the deposit displayed metallic character. The formation of specific Ti-N and O-N bonds is confirmed by spectroscopic techniques. Electrical conductance of the TiObased/p-GaN interface has been studied by current-sensing atomic force microscopy (CS-AFM) with Au-covered tip. Formation of ohmic nano-contacts on p-GaN surfaces was observed over whole probed surface. The contacts were homogeneous in contrast to the grainy structure of TiO-based film. The results suggest that TiO may be considered as an intermediate semiconducting layer (ISL) useful for p-GaN electrical contact engineering.

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Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structures

Salcianu

Thrush

Plumb

et al. 2008

Phys. Status Solidi (c)

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Electroluminescence (EL) testing of Light Emitting Diode (LED) structures is usually done at the chip level. Assessing the optical and electrical properties of LED structures at the wafer scale prior to their processing would improve the cost effectiveness of producing LED‐lamps. A non‐destructive method for studying the luminescence properties of the structure at the wafer‐scale is photoluminescence (PL). However, the relationship between the on‐wafer PL data and the final device EL can be less than straightforward (Y. H Aliyu et al., Meas. Sci. Technol. 8, 437 (1997) [1]) as the two techniques employ different carrier injection mechanisms. This paper provides an overview of some different techniques in which palladium is used as a contact in order to obtain on‐wafer electroluminescence information which could be used to screen wafers prior to processing into final devices. Quick mapping of the electrical and optical characteristics was performed using either palladium needle electrodes directly, or using the latter in conjunction with evaporated palladium contacts to inject both electrons and holes into the active region via the p‐type capping layer of the structure. For comparison, indium was also used to make contact to the n‐layer so that electrons could be directly injected into that layer. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Response to Comment on ‘Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces’ [J. Appl. Phys. 91, 732 (2002)]

Cited by 17 publications

References 4 publications

Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface

Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface

TiO thin films on GaN(0001)

Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structures

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