Response of metal-insulator-metal point contact diodes to visible laser light

Daniel, H. U.; Steiner, Markus J.; Walther, H.

doi:10.1007/bf00935384

Cited by 27 publications

(3 citation statements)

References 15 publications

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“…Point-contact MOM diodes combined with wire antennas were first used for the detection and mixing at sub-millimeter wavelengths in 1966 [2]. In the following years, these structures were applied to detect IR radiation [3], [4], and visible light [5]. Point-contact devices are not suitable for commercial applications because of their mechanical instability and noneproducibility.…”

Section: Mom Backgroundmentioning

confidence: 99%

Tunable antenna-coupled metal-oxide-metal (MOM) uncooled IR detector (Invited Paper)

et al. 2005

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Missile Defense Agency/Advanced Systems, in partnership with both EUTECUS/University of Notre Dame (UND) and ITN Energy Systems/University of Central Florida (UCF) has embarked on developing a multispectral imaging IR sensor. This technology, when matured, could revolutionize IR sensor technology by reducing the need for cooling, eliminating lattice matching and avoiding epitaxial fabrication processes. This paper describes the approaches employed by both EUTECUS/UND and ITN/UCF teams to integrate nano-antenna technology with the existing cellular neural network (CNN) processor to produce multispectral IR sensors. This effort is a leap into the performance realm where biological systems operate.

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Section: Mom Backgroundmentioning

confidence: 99%

Tunable antenna-coupled metal-oxide-metal (MOM) uncooled IR detector (Invited Paper)

et al. 2005

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“…Signals of third-, fourth-and fifth-order mixing processes were measured with the spectrum analyzer after 32 dB pre-amplification at the frequency vmeured Vmeasured =I(vi V2)(fl2)VMWI (2) where vi and V2 represent the CO2-laser frequencies, VMW the frequency of the Gunn oscillator, and n = 2,3,4,5 the mixing order. For this purpose, the diode was irradiated by microwave radiation generated by a Gunn oscillator working at the frequencies 58.8 GHz 50 MHz as well as by the two C02-laser beams.…”

Section: Higher Order Mixingmentioning

confidence: 99%

Mixing of 28-THz CO 2 -laser radiation by nanometer thin film Ni-NiO-Ni diodes with difference frequencies up to 176 GHz

Kneubuehl

Herrmann

Rothuizen

et al. 1998

Infrared Detectors and Focal Plane Arrays V

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We report on the first successful mixing of 28 THz radiation performed with thin-film nanometer-scale Ni-NiO-Ni diodes connected to integrated bow-tie infrared antennas. Difference frequencies up to 176 GHz were measured between two C02laser 28 THz emissions in mixing processes up to the fifth order by addition of microwaves generated by a Gunn oscillator. The bow-tie antennas show almost perfect polarization with respect to the incident radiation.Keywords: Thin-film MOM diodes, infrared mixing, integrated infrared antennasThe mixing of infrared radiation with point-contact metal-oxide-metal (MOM, MIM) diodes was first reported in 1968. In the meanwhile the range of operation of these devices has been extended to the visible.2 The operation of these diodes in the point-contact configuration is restricted to laboratory applications because of their irreproducibility and low mechanical stability. They are currently used in absolute frequency measurements for the development of time and frequency standards and in high-resolution spectroscopy as tunable far-infrared (FIR) radiation source. Serious attempts were made to integrate the MOM diodes on a substrate in order to produce more practical devices for field applications. In the early seventies, Small et a!. and Wang et a!. 4 reported the fabrication of thin-film diodes with rectification capabilities in the 10 jtm region. Small et al. also reported on third-order frequency mixing performed with a FIR carrier frequency of approximately 1 THz with difference frequencies of about 75 0Hz. Our own development of thin-film Ni-NiO-Ni diodes with integrated dipole, bow-tie and spiral antennas as detectors has been described previously.58 The first experiments on mixing 28 THz radiation with our Ni-NiO-Ni diodes were made at LENS (Florence, Italy). They resulted in the measurement of difference frequencies up to 85 MHz.9 We now report on the first successful mixing of two 28 THz (10.7 tm) C02-laser transitions in the lop branch with difference frequencies up to 176.2 GHz performed by thin-film Ni-NiO-Ni diodes.10'1 1,12

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“…14 However, when visible light is used to illuminate the tunnel junctions in STMs or in metal-insulator-metal ͑MIM͒ contacts, the observed effects cannot be explained by the mechanism of coherent photoassisted tunneling. 15,16 The reason for this discrepancy is the large ratio between photon energy and tunnel barrier height. For visible light both energies are comparable and, therefore, tunneling of hot electrons with an excess energy is important.…”

mentioning

confidence: 97%

Hot electron tunneling in femtosecond laser-assisted scanning tunneling microscopy

Merschdorf

Pfeiffer

Thon

et al. 2002

Applied Physics Letters

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The combination of scanning tunneling microscopy with femtosecond laser spectroscopy yields simultaneously ultimate spatial and temporal resolution. One possibility to realize this combination is the direct excitation of the tunnel junction in a pump–probe configuration and the detection of a tunnel current component that depends nonlinearly on the laser intensity. The laser-induced signal is expected to be very small, therefore a suitable sample material and a modulation technique is required. In measurements on a GaP(100) surface evidence for tunneling of hot electrons is obtained giving the possibility for local time-resolved tunneling spectroscopy.

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Response of metal-insulator-metal point contact diodes to visible laser light

Cited by 27 publications

References 15 publications

Tunable antenna-coupled metal-oxide-metal (MOM) uncooled IR detector (Invited Paper)

Tunable antenna-coupled metal-oxide-metal (MOM) uncooled IR detector (Invited Paper)

Mixing of 28-THz CO 2 -laser radiation by nanometer thin film Ni-NiO-Ni diodes with difference frequencies up to 176 GHz

Hot electron tunneling in femtosecond laser-assisted scanning tunneling microscopy

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