Response of electrical and dielectric parameters of ZnIn2Te4 thin films to temperature and frequency

Shakra, A.M.; Fadel, M.; Shenouda, S.S.

doi:10.1016/j.physb.2020.412082

Cited by 6 publications

(3 citation statements)

References 39 publications

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“…At lower temperatures the dielectric constant increases slowly and then increases more with increasing temperature. The same results was obtained for all the studied compositions and similar to results obtained before [40,35,36,32].…”

Section: -The Dependence Of Ac Conductivity On Temperaturesupporting

confidence: 90%

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Shakra

Fadel

Kalila³

2021

Preprint

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Bulk glassy Se98Te2 and Se96Te2X2 (X = Zn and Cd) were prepared by melting quenching method. Thin films of various thicknesses (200 – 670 nm) were obtained by the thermal evaporation method. The structure of the prepared compositions was investigated by X-ray and EDX analysis. We studied the effect of Zn and Cd addition on the electric and dielectric properties of Se98Te2 thin films. Our measurements were studied in the temperature range (298-323K) below the glass transition temperature and frequency range (100 Hz-1 MHz). DC conductivity showed a single conduction mechanism by hopping of charge carriers at the band edges for the studied system. The dependence of Ac conductivity on frequency is linear with frequency exponent s lies very close to unit and is independent of temperature. This can be explained by the correlated barrier hopping (CBH) model. The dielectric constant ε1 and dielectric loss ε2 noticed to decrease with frequency and increase with temperature. The maximum barrier height Wm was calculated according to Guinitin.

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Section: -The Dependence Of Ac Conductivity On Temperaturesupporting

confidence: 90%

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Shakra

Fadel

Kalila³

2021

Preprint

Self Cite

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“…9 presents the plot of ln σ ac versus 1000/ T at different frequencies. Clearly, σ ac increased with increasing temperature up to 323.5 K, obeying the Arrhenius relation: 56–58 where Δ E ac is the ac activation energy. The increase in σ ac with increasing temperature could be due to the enhanced thermal activation of the electron drift velocity.…”

Section: Resultsmentioning

confidence: 79%

“…9 presents the plot of ln s ac versus 1000/T at different frequencies. Clearly, s ac increased with increasing temperature up to 323.5 K, obeying the Arrhenius relation: [56][57][58]…”

Section: Ac Conductivitymentioning

confidence: 83%

Synthesis, structural, spectroscopic and electric/dielectric studies of a nanocrystalline Ni(ii) complex based on [(1,3-diphenyl-1H-pyrazol-4-yl)methylene]thiocarbonohydrazide

Fouad,

Ali,

Assiri

et al. 2024

RSC Adv.

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Estimation of the electrical and dielectric properties for Se98Te2 and Se96Te2X2 (X = Zn and Cd) chalcogenides

Shakra

Fadel

Kalila

2021

J Mater Sci: Mater Electron

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Response of electrical and dielectric parameters of ZnIn2Te4 thin films to temperature and frequency

Cited by 6 publications

References 39 publications

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Synthesis, structural, spectroscopic and electric/dielectric studies of a nanocrystalline Ni(ii) complex based on [(1,3-diphenyl-1H-pyrazol-4-yl)methylene]thiocarbonohydrazide

Estimation of the electrical and dielectric properties for Se98Te2 and Se96Te2X2 (X = Zn and Cd) chalcogenides

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