Resonant Valence-Band Satellites at the Ni-3p Edge of Ni₃Al, Ni₃Ga and Ni₃In

Abstract

Valence-band photoemission sspectra of Ni 3 Al, Ni 3 Ga and Ni 3 In were measured with synchrotron radiation at photon energies around the Ni-3p core excitation threshold. The valence-band satellites are resonantly enhanced. The number of holes per Ni atom in the Ni-d band for Ni 3 Al, Ni 3 Ga and Ni 3 In is estimated to be 0.37, 0.30 and 0.34, respectively. The self-energy correction due to the configuration interaction is 0.72, 0.71 and 0.72 eV, respectively, for Ni 3 Al, Ni 3 Ga and Ni 3 In. The Fano parameters and the effective Coulomb interactions between two 3D holes for these intermetallic compounds are determined. 2757 Int. J. Mod. Phys. B 1998.12:2757-2767. Downloaded from www.worldscientific.com by UNIVERSITY OF CALIFORNIA @ DAVIS on 02/05/15. For personal use only.