Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition

Ray, Sumanta; Ruden, P.P.; Соколов, В. А.; Kolbas, R. M.; Boonstra, T.; Williams, James A.

doi:10.1063/1.96849

Cited by 44 publications

(13 citation statements)

References 8 publications

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“…The low resonant peak voltage suggests that the bac~round carbon density is effectively negated in this growth mode, but estimates based on growth calibrations for these conditions still indicate a p-dopant density of 2 x 10 17 cm-3 • While these results are not superior to conventional MBE-grown AIGaAs/GaAs RIDs, the ALE RTDs are comparable to previously reported MOCVD-grown 25 RTDs. The difference between MBE and ALE RIDs is attributed to the high background carrier densities in the tunnel barriers grown by ALE, which leads to an increase in leakage current at the off-resonance biases.…”

Section: Aigaas/gaas Resonant Tunneling Diodessupporting

confidence: 66%

Atomic-layer epitaxy for heterostructures

Bedair

1993

JOM

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Atomic-layer epitaxy offers the ultimate control of interface abruptness and thickness uniformity across a large-area wafer. In the work reported here, GaAs, AIGaAs, and In GaP were grown by atomic-layer epitaxy with one monolayer of growth per deposition cycle. Atomic-layer-epitaxy-grown AIGaAs/ GaAs quantum well structures showed excellent thickness uniformity, and resonant tunneling diodes showed excellent uniformity in both threshold voltage and threshold current. GaInP/GaAs quantum structures were grown and studied; they had well widths as thin as One lattice constant. This 5.6 A GaAs quantum well is believed to be one of the thinnest grown in this material system.

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Section: Aigaas/gaas Resonant Tunneling Diodessupporting

confidence: 66%

Atomic-layer epitaxy for heterostructures

Bedair

1993

JOM

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“…This temperature was chosen from the result that the variation of thickness is smallest for QWs as shown in Fig. There are only a few reports on GaAs-Al͑Ga͒As DBRTDs grown by MOVPE, [13][14][15] and most DBRTDs have been grown by MBE. One of the typical current-voltage characteristics of DBRTDs measured at 85 K is shown in Fig.…”

Section: E Effects Of Interface Flatness On the Characteristics Of Dmentioning

confidence: 99%

Effects of interface flatness and abruptness on optical and electrical characteristics of GaAs/AlGaAs quantum structures grown by metalorganic vapor phase epitaxy

Shinohara¹,

Yokoyama²,

Inoue³

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Photoluminescence of hydrogenated GaAs/AlGaAs quantum wells grown by metalorganic vapor phase epitaxySymmetric self-electro-optic effect device array grown by metalorganic vapor phase epitaxy using GaAs/Al0.04Ga0.96As shallow quantum wells Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As-GaAs single quantum well interfaces Heterointerface flatness and abruptness of GaAs/AlGaAs quantum wells are controlled during metalorganic vapor phase epitaxy ͑MOVPE͒. Various growth modes such as two-dimensional ͑2D͒ nucleation, step flow, and step bunching are achieved by changing the growth temperature and substrate surface misorientation angle. The degree of monolayer step smoothness and ordering are also changed. The effects of these nanometer-scale morphologies and interface abruptness on the full width at half maximum ͑FWHM͒ of 4.2-K photoluminescence spectra from quantum wells ͑QWs͒ are individually determined. The FWHM is increased in order by degraded interface abruptness, step roughness, multisteps, and 2D islands. Effective thickness variations introduced by these features are roughly Ͼ2.0, 1.0, 0.6, and 0.2 monolayers ͑ML͒, respectively, for 7-ML-thick QWs. Some of these effects on current-voltage characteristics of double barrier resonant tunneling diodes ͑DBRTDs͒ are also investigated. The factor most strongly affecting the characteristics of DBRTDs is step disordering, that is, a difference in step edge location between the top and the bottom surfaces of barriers. By making this difference smaller than the electron's de Broglie wavelength using vicinal substrates, we obtain the best negative resistance characteristics ever reported for MOVPE growth.

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“…A higher Ec is effective in reducing the thermionic component of the valley current, and thus increase the PVCR [6], [7]. Previous DBRTD's made with AlGaAs/GaAs and InP/InGaAs material systems showed a low PVCR due to small Ec [8], [9]. Some other reports with unstrained InAlAs/InGaAs material system achieved a higher PVCR at low temperature, but the PVCR was less than 10 at room temperature [10]- [12].…”

Section: Introductionmentioning

confidence: 97%

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Chang

Lü

et al. 2000

IEEE Electron Device Lett.

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We demonstrate a novel Al 0 66 In 0 34 As 0 85 Sb 0 15 / In 0 53 Ga 0 47 As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm 2 were obtained at room temperature.Index Terms-Current-voltage characteristic, current ratio, metalorganic vapor phase epitaxy, peak current density, peak-to-valley current ratio, tunneling diode.

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Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition

Cited by 44 publications

References 8 publications

Atomic-layer epitaxy for heterostructures

Atomic-layer epitaxy for heterostructures

Effects of interface flatness and abruptness on optical and electrical characteristics of GaAs/AlGaAs quantum structures grown by metalorganic vapor phase epitaxy

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

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