Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures

Wu, Jiabin; Chang, Chun Yen; Lee, C. P.; Chang, K. H.; Liu, D. G.; Liou, D. C.

doi:10.1063/1.103879

Cited by 27 publications

(4 citation statements)

References 9 publications

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“…3(d), revealing the alignment between emitter Fermi level E E f , and the lowest subband in the well with energy E 1 . This tunneling feature, occurring at a voltage lower than the main resonant peak, has been reported previously in arsenide [32][33][34][35][36][37] and nitride RTDs [14 and 16]. In our devices, the injection of 3D-carriers into the well peaks at V bias = +3.5 V and V bias = +6.6 V for the N ++ d -and N + d -RTD, respectively.…”

Section: Space-charge Effects On Resonant Tunneling Transportsupporting

confidence: 78%

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Encomendero,

Protasenko,

Rana

et al. 2023

Preprint

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The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers, results in highly asymmetric tunneling transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant-tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our model, providing a theoretical framework useful in the design and analysis of polar resonant-tunneling devices.

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Section: Space-charge Effects On Resonant Tunneling Transportsupporting

confidence: 78%

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Encomendero,

Protasenko,

Rana

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

Section: Space-charge Effects On Resonant Tunneling Transportsupporting

confidence: 78%

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

et al. 2020

View full text Add to dashboard Cite

The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers, leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant tunneling voltage achieved via uniform doping, due to dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant tunneling devices.

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“…3(b)]. Studies done in GaAs=AlGaAs RTDs featuring low-doped emitters have also reported a similar conduction regime manifested by a slight modulation of the current in the rising side of the main resonant peak [37,38]; this is the first time that this behavior is encountered in nitride RTDs.…”

Section: Resultsmentioning

confidence: 63%

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

et al. 2017

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For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs), the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

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Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures

Cited by 27 publications

References 9 publications

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

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