Resonant tunneling in semiconductor double barriers

Chang, L. L.; Esaki, L.; Tsu, Raphael

doi:10.1063/1.1655067

Cited by 1,795 publications

(450 citation statements)

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“…18) Moreover, current oscillations, 19) plateaulike behavior and hysteresis of the I-V curve have been observed in the NDR region. 20) Theoretically, Frensley found NDR in the I-V curve in a numerical computation treating a quantum Liouville equation in the Wigner representation that ignored phonon-scattering processes.…”

mentioning

confidence: 98%

An Approach to Quantum Transport Based on Reduced Hierarchy Equations of Motion: Application to a Resonant Tunneling Diode

Sakurai

Tanimura

2013

J. Phys. Soc. Jpn.

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The quantum dissipative dynamics of a tunneling process through double barrier structures is investigated on the basis of a rigorous treatment for the first time. We employ a Caldeira-Leggett Hamiltonian with an effective potential calculated self-consistently, accounting for the electron distribution. With this Hamiltonian, we use the reduced hierarchy equations of motion in the Wigner space representation to study the effects of non-Markovian thermal fluctuations and dissipation at finite temperature in a rigorous manner. Hysteresis, double plateau-like behavior, and self-excited current oscillation are observed in a negative differential resistance (NDR) region of the current-voltage curve. We find that while most of the current oscillations decay in time in the NDR region, there is a steady oscillation characterized by a tornado-like rotation in the Wigner space in the upper plateau of the NDR region.KEYWORDS: quantum transport, Caldeira-Leggett, dissipative dynamics, resonant tunneling, non-MarkovianThe Caldeira-Leggett (or Brownian) Hamiltonian has been applied to the investigation of quantum dissipative dynamics in several fundamental contexts, including quantum tunneling, 1-3) chemical reactions, 4) SQUID rings, 5) nonlinear optical response, 6) and quantum ratchets. 7) Because a complete model of quantum dissipative dynamics must treat phenomena that can only be described in real time, a great deal of effort has been dedicated to the problem of numerically integrating equations of motion derived from the Hamiltonian that describe real-time behavior. [8][9][10] Although such equations are analogous to the classical kinetic equations, which have proved to be useful in the study of classical transport phenomena, they are difficult to derive in a quantum mechanical framework without approximations and/or assumptions.In this paper, we demonstrate that the reduced hierarchy equations of motion (HEOM) in the Wigner space representation provide a powerful method to study quantum dissipative dynamics in systems subject to non-Markovian and non-perturbative thermal fluctuations and dissipation at finite temperature. [11][12][13][14][15] As an example, we employ a model describing the thermal effects in resonant tunneling diodes (RTDs). 16,17) Although the validity of the Caldeira-Leggett Hamiltonian for describing electron transport phenomena has not yet been investigated thoroughly, because it has a firm quantum mechanical foundation, and because we feel that it is necessary to investigate the validity of the previous theoretical results in a fully quantum mechanical treatment, we believe that the present study will be helpful in constructing a general understanding of electron transport phenomena.Due to quantum effects, an RTD system exhibits novel negative differential resistance (NDR) in its current-voltage (I-V ) relation. 18) Moreover, current oscillations, 19) plateaulike behavior and hysteresis of the I-V curve have been observed in the NDR region. 20) Theoretically, Frensley found NDR in the I-V curve in...

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mentioning

confidence: 98%

An Approach to Quantum Transport Based on Reduced Hierarchy Equations of Motion: Application to a Resonant Tunneling Diode

Sakurai

Tanimura

2013

J. Phys. Soc. Jpn.

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“…Through the use of NDR devices, circuits with complicated functions can be implemented with significantly fewer components [12][13][14][15][16][17]. There are various NDR devices such as Esaki tunnel diode [5], Gunn effect diode [6], resonant tunneling diode [7], etc., caused by various physical mechanisms. For example, Gunn effect diode, also known as transferred electron diode, is given rise to by a fieldinduced transfer of conduction band electrons from a low energy, high mobility valley to higher energy, low mobility satellite valleys [8].…”

Section: Ndr In Molecular Junctionsmentioning

confidence: 99%

“…The discovery of NDR in semiconductor diodes has opened a new chapter in semiconductor device physics and device development [5][6][7][8][9][10][11]. Through the use of NDR devices, circuits with complicated functions can be implemented with significantly fewer components [12][13][14][15][16][17].…”

Section: Ndr In Molecular Junctionsmentioning

confidence: 99%

“…In 1979, Potember et al [1] reported bistable, reproducible, and nanosecond electronic switching and memory phenomena in an organometallic charge-transfer (CT) complex salt CuTCNQ formed by TCNQ (7,7,8,8-tetracyanop-quinodimethane), which acts as an electron acceptor with metallic copper as the electron-rich donor. In these materials the switching and memory phenomena are given rise to by the field assisted structural changes such as phase transitions, crystallization, and metal filament formation assisted by highly localized Joule heating.…”

Section: Introductionmentioning

confidence: 99%

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Electronic transport of molecular systems

2002

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We report stable and reproducible switching and memory effects in self-assembled monolayers (SAMs). We demonstrate realization of negative differential resistance (NDR) and charge storage in electronic devices that utilize single redox-center-contained SAM as the active component; and compare the effects of various redox centers to switching and storage behavior. The devices exhibit electronically programmable and erasable memory bits with bit retention times greater than 15 min at room temperature. Ó

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“…This has resulted in tunneling devices such as Resonant Tunneling Diodes (RTDs) 1 and Quantum Cascade lasers 2 that require nearly ideal translational invariance in the plane of the layers to impose lateral momentum conservation and restrict transport to quantum resonances. There are times, however, when defects are necessary to observe new effects.…”

Section: Introductionmentioning

confidence: 99%

Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport

et al. 2010

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For more than three decades, research on tunneling through planar barriers has focused principally on processes that conserve momentum parallel to the barrier. Here we investigate transport in which scattering destroys lateral momentum conservation and greatly enhances the tunneling probability. We have measured its energy dependence using capacitance spectroscopy, and we show that for electrons confined in a quantum well, the scattering enhancement can be quenched in an applied magnetic field, enabling this mechanism to function as an external probe of the origin of the quantum Hall effect.

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Resonant tunneling in semiconductor double barriers

Cited by 1,795 publications

References 9 publications

An Approach to Quantum Transport Based on Reduced Hierarchy Equations of Motion: Application to a Resonant Tunneling Diode

An Approach to Quantum Transport Based on Reduced Hierarchy Equations of Motion: Application to a Resonant Tunneling Diode

Electronic transport of molecular systems

Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport

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