Resonant tunneling and quantum interference of a two-spin system in silicon tunnel FETs

Abstract

We investigated the resonant tunneling of a two-spin system through the double quantum dots in Al–N-implanted silicon tunnel FETs (TFETs) by electrical-transport measurements and Landau–Zener–Stückelberg–Majorana interferometry with and without magnetic fields. Our experimental results revealed the coexistence of spin-conserving and spin-flip tunneling channels in the two-spin system in non-zero magnetic fields. Additionally, we obtained the spin-conserving/spin-flip tunneling rates of the two-spin system through the double quantum dots in the TFET. These findings will improve our understanding of the two-spin system in silicon TFET qubits and may facilitate the coherent control of quantum states through all-electric manipulation.