Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te quantum wells subject to tilted magnetic fields

Zhukov, E. A.; Yugov, O. A.; Yugova, I. A.; Yakovlev, D. R.; Karczewski, G.; Wójtowicz, T.; Kossut, J.; Bayer, М.

doi:10.1103/physrevb.86.245314

Cited by 17 publications

(10 citation statements)

References 16 publications

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“…As shown in Figure 2(b), the amplitude of the zero RSA peak is a little smaller than the amplitude of the neighboring peaks. This may be due to the following factors: 1) A small, additional magnetic field component perpendicular to B V can lead to a reduction of the zero RSA peak amplitude [18]. This component can occur if there is a small inclination (about 1 − 2 • ) of the sample plane with respect to the k-vector (either horizontally or vertically).…”

Section: Resultsmentioning

confidence: 99%

“…The samples are placed in a vector magnet system consisting of three superconducting split-coils oriented orthogonally to each other [18]. It allows us to switch the magnetic field from the Faraday geometry (magnetic field B F parallel to the sample growth axis and the light wave vector) to the Voigt geometry (magnetic field B V perpendicular to the sample growth axis and the light wave vector).…”

Section: Methodsmentioning

confidence: 99%

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Longitudinal and transverse spin dynamics of donor-bound electrons in fluorine-doped ZnSe: Spin inertia versus Hanle effect

et al. 2015

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The spin dynamics of the strongly localized, donor-bound electrons in fluorine-doped ZnSe epilayers is studied by pump-probe Kerr rotation techniques. A method exploiting the spin inertia is developed and used to measure the longitudinal spin relaxation time, T1, in a wide range of magnetic fields, temperatures, and pump densities. The T1 time of the donor-bound electron spin of about 1.6 µs remains nearly constant for external magnetic fields varied from zero up to 2.5 T (Faraday geometry) and in a temperature range 1.8 − 45 K. The inhomogeneous spin dephasing time, T * 2 = 8 − 33 ns, is measured using the resonant spin amplification and Hanle effects under pulsed and steady-state pumping, respectively. These findings impose severe restrictions on possible spin relaxation mechanisms.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Longitudinal and transverse spin dynamics of donor-bound electrons in fluorine-doped ZnSe: Spin inertia versus Hanle effect

et al. 2015

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“…The samples are placed in a vector magnet system consisting of three superconducting split-coils oriented orthogonally to each other [47]. It allows us to measure the signal at the various magnetic field orientations from the Faraday geometry (B ) to the Voigt geometry (B ⊥ ) without changing of the optical alignment and conditions of signal detection.…”

Section: B Experimental Techniquesmentioning

confidence: 99%

Spin polarization recovery and Hanle effect for charge carriers interacting with nuclear spins in semiconductors

Smirnov,

Zhukov,

Yakovlev

et al. 2020

Preprint

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We report on theoretical and experimental study of the spin polarization recovery and Hanle effect for the charge carriers interacting with the fluctuating nuclear spins in the semiconductor structures. We start the theoretical description from the simplest model of static and isotropic nuclear spin fluctuations. Then we describe the modification of the polarization recovery and Hanle curves due to the anisotropy of the hyperfine interaction, finite nuclear spin correlation time and the strong pulsed spin excitation. For the latter case we describe the resonance spin amplification effect in the Faraday geometry and discuss the manifestations of the quantum Zeno effect. The set of the experimental results for various structures and experimental conditions is chosen to highlight the specific effects predicted theoretically. We show that the spin polarization recovery is a very valuable tool for addressing carrier spin dynamics in semiconductors and their nanostructures.

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“…It was pointed out 23 that the optically manifested spin dynamics becomes particularly rich if the magnetic field is tilted from the in-plane (Voigt) orientation, leading to the coexistence of oscillating and exponential components in the Faraday response. The theory was subsequently extended to model the RSA response of confined holes and electrons 19,24,25 . In the latter case, it was again pointed out that the shape of RSA signals is very sensitive to the magnetic field orientation deviating from the exact Voigt geometry.…”

Section: Introductionmentioning

confidence: 99%

Spin dynamics inp-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry

et al. 2013

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We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al0.3Ga0.7As single QW and showing that our model can reproduce experimentally observed signals.arXiv:1306.6363v2 [cond-mat.mes-hall]

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Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te quantum wells subject to tilted magnetic fields

Cited by 17 publications

References 16 publications

Longitudinal and transverse spin dynamics of donor-bound electrons in fluorine-doped ZnSe: Spin inertia versus Hanle effect

Longitudinal and transverse spin dynamics of donor-bound electrons in fluorine-doped ZnSe: Spin inertia versus Hanle effect

Spin polarization recovery and Hanle effect for charge carriers interacting with nuclear spins in semiconductors

Spin dynamics inp-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry

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