Resonant Raman scattering and photoluminescence in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:mi mathvariant="normal">CdSe</mml:mi></mml:math>multiple quantum wells

Nesheva, D.; Raptis, Constantine A.; Levi, Z.

doi:10.1103/physrevb.58.7913

Cited by 25 publications

(24 citation statements)

References 33 publications

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“…This result agrees well with the results reported in literatures [13,18]. Microstrain is one of the causes for quantum size effects in multilayer system due to heap arrangement [15]. Therefore, approximate level of microstrain, developed in CdSe/SiO x ML thinfilms, were calculated using the following relation [19],…”

Section: Structural Propertiessupporting

confidence: 64%

“…CdSe/SiO x multilayer thin film shows interesting and peculiar properties in absorption and emission spectra due to its type II band structure alignment [14,15,24]. As the electron mobility in SiO x matrix layers is very low due to large number of defects in them, the carrier (electrons and holes) transport takes place only through CdSe sublayers exclusively [25,26].…”

Section: Optical Propertiesmentioning

confidence: 99%

“…CdSe offers the possibility of studying quantum confinement effects in higher cluster size regimes as it is having large Bohr exciton diameter [10][11][12]. Mechanism of nanocluster formation, band edge absorption spectroscopy, photoluminescence and photoreflectance properties of CdSe/SiO x multilayer (d SiOx > d CdSe ) systems have already been studied by various research groups [13][14][15][16]. Preparation of Multilayer (ML) thin films showed that the layers deposited in a step-by-step manner were smoother than those made in one step [17].…”

Section: Introductionmentioning

confidence: 99%

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Quantum confinement effect in multilayer structure of alternate CdSe and SiOx insulator matrix thinfilms

Kumar¹,

Devadason²

2013

Superlattices and Microstructures

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Section: Structural Propertiessupporting

confidence: 64%

Section: Optical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Quantum confinement effect in multilayer structure of alternate CdSe and SiOx insulator matrix thinfilms

Kumar¹,

Devadason²

2013

Superlattices and Microstructures

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“…Figs.1a and b show that at low substrate temperatures and a thickness ratio of d matrix =d CdSe ¼ 20 the surface roughness of the 'matrix' layers is sufficient to ensure the formation of quasi-isolated CdSe nanoparticles. However, multilayer structures fabricated as described above, but having a thickness ratio d matrix =d CdSe E1 (d ¼ 2210 nm) and a smooth surface of the 'matrix' layers behave as high quality amorphous/nanocrystalline multiple quantum wells [11,17,18]. These results prove the correctness of the suggested mechanism of selforganized nanocluster formation on a rough surface and indicate that the multilayer vapor deposition technique may be applied for fabrication of both II-VI nanoclusters in various matrices and multiple quantum well structures from various materials.…”

Section: Nanoparticle Formationmentioning

confidence: 99%

Nanoparticle layers of CdSe buried in oxide and chalcogenide thin film matrices

Nesheva

Hofmeister

Levi

et al. 2002

Vacuum

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Nanoparticles of CdSe embedded in amorphous SiO x , GeS 2 and polycrystalline ZnSe thin films have been produced by sequential physical vapour deposition of CdSe and one of the matrix materials. High-resolution electron microscopy has been used to prove the formation of CdSe nanoparticles. Particles with nearly spherical shape were observed whose spatial distribution follows the surface morphology of the 'matrix' films. The mechanism of nanoparticle formation on a rough surface has been discussed. It has been found that annealing of SiO x -CdSe films at 973 K leads to the formation of isolated CdSe nanoparticles homogeneously distributed in the matrix. Quantum-size increase in the optical band gap of CdSe nanoparticles has been observed in all matrices used. r

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“…These additional flat lattice directions might be attributed to the micro-strain created at the ITO/Ge interface. The lattice mismatch between the adjacent layers causes the microstrain [22]. In order to calculate the average crystallite size along (400) orientation, the Debye-Scherrer equation,…”

Section: Resultsmentioning

confidence: 99%

High performing ITO/Ge heterojunction photodetector for broad wavelength detection

Yun

Kumar

Park

et al. 2015

J Mater Sci: Mater Electron

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High-performing photodetector was fabricated by the ITO/Ge heterojunction device. Due to a small bandgap Ge semiconductor, ITO/Ge photodetector showed a significantly high photoresponse for long wavelengths. For ITO/Ge photodetector fabrication, an optically transparent and electrically conductive ITO layer was deposited on a Ge substrate and spontaneously formed a rectifying junction. The HRTEM image revealed the presence of GeO x at the interface of the ITO and Ge. The XPS and UPS studies were carried out to realize the band-offset structure of ITO/Ge photodiode. When the p-type Ge and ITO are brought into contact, the Fermi levels of both the materials are lined up. Besides, the energy bands of Ge are pinned to the Fermi level of the ITO layer at the junction. The band bending effect is depicted from the band offset of the ITO/Ge photodetector. We discuss an effective method of the ITO/Ge heterojunction device fabrication and suggest a strong route for high-performing broad range wavelength (600-900 nm) photodetectors.

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Resonant Raman scattering and photoluminescence inSiOx/CdSemultiple quantum wells

Cited by 25 publications

References 33 publications

Quantum confinement effect in multilayer structure of alternate CdSe and SiOx insulator matrix thinfilms

Quantum confinement effect in multilayer structure of alternate CdSe and SiOx insulator matrix thinfilms

Nanoparticle layers of CdSe buried in oxide and chalcogenide thin film matrices

High performing ITO/Ge heterojunction photodetector for broad wavelength detection

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