“…Due to absence of the FC stages, almost all the WuRXs from this class rely closely on bulky off-chip high-Q components to build IMN and achieve band selection and passive voltage gain [4][5][6][7][8][9][10][11][12][13][14]. Since the Q-factor decreases significantly as the carrier frequency increases, these WuRXs are further constrained to applications with frequencies below 1 GHz.…”
Section: Direct Rf Signal Detection Receiversmentioning
confidence: 99%
“…So far, state-of-the-art WuRXs focus primarily on a high sensitivity by using a possibly low-power consumption. To simultaneously achieve both the metrics, off-chip high-Q components such as high-Q coils [3][4][5][6][7][8][9][10][11], MEMS-based [12][13][14] or BAW-based [15] input matching networks (IMN) were often used. While they provide the WuRXs with a narrow RF bandwidth and a high passive voltage gain, these bulky components also reduce the system compactness and increase the integration cost.…”
This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterodyne receiver (RX) topology, the WuRX analogue front‐end (AFE) incorporates a 5.5–7.5‐GHz band‐tunable low‐power low‐noise amplifier, a low‐power Gilbert mixer, a digitally controlled oscillator (DCO), a 100‐MHz IF band‐pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. By application of duty cycling with a low duty cycle below 1%, the power consumption of the AFE was significantly reduced. In addition, the on‐chip digital bank‐end consists of a frequency divider, a phase corrector, a 31‐bit correlator and a serial peripheral interface. A proof‐of‐concept WuRX circuit occupying an area of 1200 μm by 900 μm has been fabricated in a GlobalFoundries 45‐nm RF‐SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 μW. Tested at 8 operation bands covering 5.5–7.7 GHz, the WuRX has a measured sensitivity between −67.5 dBm and −72.4 dBm at a wake‐up error rate of 10−3. With the sensitivity unchanged, the data rate of the WuRX can be scaled up to 8.2 kbps. To the authors' best knowledge, this work offers the largest RF bandwidth from 5.5 to 7.5 GHz, the most operation channels (≥8) and the fastest settling time (<115 ns) among the WuRXs reported to date.
“…Due to absence of the FC stages, almost all the WuRXs from this class rely closely on bulky off-chip high-Q components to build IMN and achieve band selection and passive voltage gain [4][5][6][7][8][9][10][11][12][13][14]. Since the Q-factor decreases significantly as the carrier frequency increases, these WuRXs are further constrained to applications with frequencies below 1 GHz.…”
Section: Direct Rf Signal Detection Receiversmentioning
confidence: 99%
“…So far, state-of-the-art WuRXs focus primarily on a high sensitivity by using a possibly low-power consumption. To simultaneously achieve both the metrics, off-chip high-Q components such as high-Q coils [3][4][5][6][7][8][9][10][11], MEMS-based [12][13][14] or BAW-based [15] input matching networks (IMN) were often used. While they provide the WuRXs with a narrow RF bandwidth and a high passive voltage gain, these bulky components also reduce the system compactness and increase the integration cost.…”
This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterodyne receiver (RX) topology, the WuRX analogue front‐end (AFE) incorporates a 5.5–7.5‐GHz band‐tunable low‐power low‐noise amplifier, a low‐power Gilbert mixer, a digitally controlled oscillator (DCO), a 100‐MHz IF band‐pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. By application of duty cycling with a low duty cycle below 1%, the power consumption of the AFE was significantly reduced. In addition, the on‐chip digital bank‐end consists of a frequency divider, a phase corrector, a 31‐bit correlator and a serial peripheral interface. A proof‐of‐concept WuRX circuit occupying an area of 1200 μm by 900 μm has been fabricated in a GlobalFoundries 45‐nm RF‐SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 μW. Tested at 8 operation bands covering 5.5–7.7 GHz, the WuRX has a measured sensitivity between −67.5 dBm and −72.4 dBm at a wake‐up error rate of 10−3. With the sensitivity unchanged, the data rate of the WuRX can be scaled up to 8.2 kbps. To the authors' best knowledge, this work offers the largest RF bandwidth from 5.5 to 7.5 GHz, the most operation channels (≥8) and the fastest settling time (<115 ns) among the WuRXs reported to date.
“…In the 5G/IoT era, the emergence of a large number of consumer electronics with wireless and mobile communication abilities has increased the demand for RF front-end components [228][229][230]. Piezoelectric MEMS resonators, as the main building blocks (filters and oscillators) of the RF front-end, play an important role in frequency control and precise timing [231].…”
Section: Piezoelectric Resonators For Rf Front-endmentioning
The rapid development of the fifth-generation mobile networks (5G) and Internet of Things (IoT) is inseparable from a large number of miniature, low-cost, and low-power sensors and actuators. Piezoelectric micro-electromechanical system (MEMS) devices, fabricated by micromachining technologies, provide a versatile platform for various high-performance sensors, actuators, energy harvesters, filters and oscillators (main building blocks in radio frequency (RF) front-ends for wireless communication). In this paper, we provide a comprehensive review of the working mechanism, structural design, and diversified applications of piezoelectric MEMS devices. Firstly, various piezoelectric MEMS sensors are introduced, including contact and non-contact types, aiming for the applications in physical, chemical and biological sensing. This is followed by a presentation of the advances in piezoelectric MEMS actuators for different application scenarios. Meanwhile, piezoelectric MEMS energy harvesters, with the ability to power other MEMS devices, are orderly enumerated. Furthermore, as a representative of piezoelectric resonators, Lamb wave resonators are exhibited with manifold performance improvements. Finally, the development trends of wearable and implantable piezoelectric MEMS devices are discussed.
“…The specific frequency is one where the system retains input energy with minimum loss, which is one of its natural frequencies [ 6 , 7 ]. A resonator is the basis for combining many devices, such as radio frequency filters and resonant sensors [ 8 , 9 , 10 ]. In a resonant accelerometer, the resonator is the core sensitive element [ 11 , 12 ].…”
This study aims to develop methods to design and optimize the resonator in a resonant accelerometer based on mode and frequency analysis. First, according to the working principle of a resonant accelerometer, the resonator is divided into three parts: beam I, beam II, and beam III. Using Hamilton’s principle, the undamped dynamic control equation and the ordinary differential dynamic equation of the resonant beam are obtained. Moreover, the structural parameters of the accelerometer are designed and optimized by using resonator mode and frequency analysis, then using finite element simulation to verify it. Finally, 1 g acceleration tumbling experiments are built to verify the feasibility of the proposed design and optimization method. The experimental results demonstrate that the proposed accelerometer has a sensitivity of 98 Hz/g, a resolution of 0.917 mg, and a bias stability of 1.323 mg/h. The research findings suggest that according to the resonator mode and frequency analysis, the values of the resonator structural parameters are determined so that the working mode of the resonator is far away from the interference mode and avoids resonance points effectively. The research results are expected to be beneficial for a practical resonant sensor design.
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