Resonant Magnetoresistance in Asymmetric Double-Barrier Magnetic Tunnel Junctions

et al. 2015

Sci Rep

Self Cite

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature.

Section: Resultsmentioning

confidence: 99%

“…The solution is stationary over time and space. Analytical views of the transmission are accessed in refs 16 , 37 . SBS was derived as a limit of the DBS at d → 0.…”

Section: Model Of Coherent Tunnelingmentioning

confidence: 99%

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

et al. 2015

Sci Rep

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“…1(b) and Fig. 1(c 10 The first term has a simple form (1) and represents simple approach which can be used also for description of the direct electron tunneling in MTJs [5][6][7][8][9] In case of symmetric nonmagnetic a -spot contact 2) were simplified in the limit of the nonmagnetic symmetric a-spot contact: …”

Section: A-spot Model Of the Magnetic Pointcontactmentioning

confidence: 99%

“…3(a) and 3(f)]. One can be also induced by nonequal barrier thicknesses 6 . It is assumed that 0 V -shift can be compensated according to Kondo , the system's I-V has the crossover of the classical and quantum regimes of the conductance with reduced TMR value.…”

Section: T-induced Tmr Behavior Near Kondo Temperaturementioning

confidence: 99%

See 1 more Smart Citation

Tunnel Magnetoresistance and Temperature Related Effects in Magnetic Tunnel Junctions with Embedded Nanoparticles

Lai

2016

SPIN

Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs). The electron tunnel transport through NP was simulated in range of double barrier approach, which was integrated into the model of the magnetic point-like contact. The resonant TMR conditions and temperature impact were explored in detail. Moreover, the possible reasons of the temperature induced resonant conditions were discussed in the range of the lead-tunneling cell (TC)-lead model near Kondo temperature. We also found that redistribution of the voltage drop becomes crucial in this model. Furthermore, the direct tunneling plays the dominant role and cannot be omitted in the quantum systems with the total tunneling thickness up to 5-6 nm. Hence, Coulomb blockade model cannot explain Kondoinduced TMR anomalies in nanometer-sized tunnel junctions.

Tunnel magnetoresistance and spin transfer torque in magnetic tunnel junction with embedded nanoparticles

2018

EPJ Web Conf.

Self Cite

The theoretical model of spin-dependent transport in magnetic tunnel junctions (MTJ) containing magnetic or non-magnetic nanoparticle is developed. The dependences of tunnel magnetoresistance (TMR) and in-plane component of spin transfer torque (STT) on the applied voltage for various sizes of nanoparticles of the order of the mean free path of the conduction electron are calculated. The calculation is performed in the approximation of the ballistic transport of conduction electrons through the insulating layers of the MTJ and the nanoparticles.