2022
DOI: 10.1016/j.actamat.2022.118143
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Resonant interaction between phonons and PbTe/PbSe (001) misfit dislocation networks

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Cited by 4 publications
(2 citation statements)
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“…The method (a) is applicable for low-temperature simulations of the propagation of ultrashort phonon pulses or scattering on interfaces or dislocations, in which the critically regions can be discretized with atomic resolution, while the perfect single crystalline region can be modelled with finite elements [49]. The transport of short-wavelength phonons within each finite element is thus ballistic.…”
Section: Finite-element Implementationmentioning
confidence: 99%
See 1 more Smart Citation
“…The method (a) is applicable for low-temperature simulations of the propagation of ultrashort phonon pulses or scattering on interfaces or dislocations, in which the critically regions can be discretized with atomic resolution, while the perfect single crystalline region can be modelled with finite elements [49]. The transport of short-wavelength phonons within each finite element is thus ballistic.…”
Section: Finite-element Implementationmentioning
confidence: 99%
“…This agreement demonstrates that, with significantly reduced d.f.s, CAC can reproduce the kinetic processes of the formation of dislocations in PbSe/PbTe(111) and PbTe/PbSe(001) heteroepitaxial systems obtained by MD. See [58] for more simulation results of the PbTe/PbSe epitaxy.…”
Section: Numerical Examplesmentioning
confidence: 99%