Resonant inelastic soft X-ray scattering at the Si L3 edge: experiment and theory

Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances

“…Finally, we relate the present results to the observation of a sharp peak at around 4 eV energy loss in L-edge RIXS of Si, when excited below the edge [18,19]. Predictions based on band structure calculations seem unable to explain this feature [18] and it has been assigned to a surprisingly prominent exciton state [19].…”

“…We use ω3p 3/2 = 122.1 eV, ω3p 1/2 = 126.5 eV, ω 3d 5/2 = 30 eV, ω 3d 3/2 = 30.6 eV, and 3p j = 2.1 eV, all close to literature values [18]. The final state lifetime width is accounted for by replacement of the ı-function by a Lorentzian with 3p j = 0.3 eV, and for the total spectral width we convolute with a Gaussian (FWHM = 0.42 eV) function, which takes both inherent broadening (FWHM = 0.3 eV) [18] and the spectrometer function (FWHM = 0.3 eV) into account. The finite width of the monochromator function has only a minute influence on the predictions.…”

“…(1) is independent of the 'coherency' of the process. This is entirely different in the case where momentum conservation in the scattering process is used to gain information about crystal momenta, where dynamic change of the electron momenta due to electron scattering immediately influences the RIXS spectra [18]. Below we discuss other ways in which Eq.…”

Femtosecond dynamics – snapshots of the early ion-track evolution

“…But the slope of the Auger lines carries information about the degree of excitation of the valence band during the vacancy decay. The high energy shoulder of the Auger structures reflects a convolution of the populated density of states near the Fermi level [63,66,67]. As described in detail in previous publications on a-C [64] the line widths increase with increasing projectile charge-state related to an increasing electron temperature.…”

“…Furthermore, it is possible to improve the accuracy of the fit significantly when improved partial density of states (PDOS) are considered. An analysis of the PDOS [66,67] used in this work in comparison to experimental data for UV and xray photo-electron emission (UPS and XPS), high resolution soft x-ray emission spectroscopy (XES), x-ray absorption near-edge spectroscopy (XANES), and bremsstrahlung isochromate spectroscopy (BIS or inverse XPS) has clearly revealed inconsistencies between experiment and theory. Thus, a more involved analysis of the PDOS for Si is necessary and more recent accurate theoretical results [68] should be used as a guide-line to determine a more reliable PDOS from the experimental data.…”