Resonant Enhancement of Photoluminescence Intensity and Anisotropy of Quantum Dot Monolayers with Self-Assembled Gold Nanorods

Manimunda, Praveena; Dutta, Riya; Basu, J. K.

doi:10.1007/s11468-016-0462-4

Cited by 5 publications

(5 citation statements)

References 28 publications

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“…The monolayer of QDs was transferred onto graphene FET (GrFET) by the well-known Langmuir–Blodgett method. − The pressure is kept constant at 38 mN/m for a particular area during transfer. The corresponding change in surface pressure has been shown in Supporting Information Figure S3.…”

Section: Experimental Methodsmentioning

confidence: 99%

Enhancing Carrier Diffusion Length and Quantum Efficiency through Photoinduced Charge Transfer in Layered Graphene–Semiconducting Quantum Dot Devices

Dutta

Pradhan

Mondal

et al. 2021

ACS Appl. Mater. Interfaces

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Hybrid devices consisting of graphene or transition metal dichalcogenides (TMDs) and semiconductor quantum dots (QDs) were widely studied for potential photodetector and photovoltaic applications, while for photodetector applications, high internal quantum efficiency (IQE) is required for photovoltaic applications and enhanced carrier diffusion length is also desirable. Here, we reported the electrical measurements on hybrid field-effect optoelectronic devices consisting of compact QD monolayer at controlled separations from single-layer graphene, and the structure is characterized by high IQE and large enhancement of minority carrier diffusion length. While the IQE ranges from 10.2% to 18.2% depending on QD-graphene separation, d s, the carrier diffusion length, L D, estimated from scanning photocurrent microscopy (SPCM) measurements, could be enhanced by a factor of 5–8 as compared to that of pristine graphene. IQE and L D could be tuned by varying back gate voltage and controlling the extent of charge separation from the proximal QD layer due to photoexcitation. The obtained IQE values were remarkably high, considering that only a single QD layer was used, and the parameters could be further enhanced in such devices significantly by stacking multiple layers of QDs. Our results could have significant implications for utilizing these hybrid devices as photodetectors and active photovoltaic materials with high efficiency.

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Section: Experimental Methodsmentioning

confidence: 99%

Enhancing Carrier Diffusion Length and Quantum Efficiency through Photoinduced Charge Transfer in Layered Graphene–Semiconducting Quantum Dot Devices

Dutta

Pradhan

Mondal

et al. 2021

ACS Appl. Mater. Interfaces

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“…The resulting structure achieved a photoluminescence intensity enhancement factor of up to ≈11 and increased the photoluminescence anisotropy to 0.9. [119] Inspired by nature, Li and co-workers proposed a microconcave cone array (MCA) composite mimicking the surface texture of the wings of the phoenix butterfly and incorporated it with a QD composite to obtain single-sided microstructured QD (SSM-QD) and double-sided microstructured QD (DSM-QD) composites, as shown in Figure 8b,c, to improve the color conversion efficiency (CCE) of QD-LEDs. Based on optical simulations, the diameter, aspect ratio, and pitch of the MCAs were optimized to 2.8 μm, 0.5, and 3 μm, respectively.…”

Section: Surface Structurementioning

confidence: 99%

“…The resulting structure achieved a photoluminescence intensity enhancement factor of up to ≈11 and increased the photoluminescence anisotropy to 0.9. [ 119 ]…”

Section: Light Management Of Qd Compositesmentioning

confidence: 99%

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A Review on Quantum Dot‐Based Color Conversion Layers for Mini/Micro‐LED Displays: Packaging, Light Management, and Pixelation

Chen

Zhao

et al. 2023

Advanced Optical Materials

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Mini/microlight‐emitting diodes (LEDs) are one of the most promising technologies for next‐generation displays to meet the requirements of demanding applications, including augmented reality/virtual reality displays, wearable devices, and microprojectors. To realize full‐color displays, the strategy of combining miniaturized blue nitride‐based LEDs with color conversion layers is promising due to the high efficiencies of the LEDs and the advantageous manufacturing. Quantum dots (QDs), owing to their high photoluminescence quantum yield, small particle size, and solution processability, have emerged as the color conversion material with the most potential for mini/micro‐LEDs. However, the integration of QDs into display technologies poses several challenges. From the material side, the stability of QD materials is still challenging. For the case of packaging QDs in a matrix, the dispersion quality of QDs and the light extraction of the emission need to be improved. From the fabrication side, the lack of high‐precision mass manufacturing strategies in QD pixelation hinders the widespread application of QDs. Toward the issues above, this review summarizes the research on QD materials for color conversion display in recent years to systematically draw an overview of the packaging strategies, the light management approaches, and the pixelation methods of QD materials toward mini/micro‐LED‐based display technologies.

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“…In particular, photoluminescence (PL) decay from these materials shows multiple components , corresponding to energy transfer between concentric shells of QDs. In this regard, we have also shown that emission from such compact monolayers of semiconductor QDs can be strongly quenched or enhanced − by suitably doping them with tiny metal nanoparticles (MNP) with the ability to generate localized plasmons upon irradiation with electromagnetic radiation. The emission properties depend, among other things, on the concentration of MNPs, their size, and the average separation between MNP-QD.…”

Section: Introductionmentioning

confidence: 99%

Electrical Tuning of Optical Properties of Quantum Dot–Graphene Hybrid Devices: Interplay of Charge and Energy Transfer

et al. 2021

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The combination of semiconductor quantum dots (QD) and single-layer graphene (SLG) can lead to the formation of optoelectronic devices with enhanced sensitivity and can have extensive applications in the field of the photodetector and photovoltaics. The optical properties of the resultant hybrid material are controlled by the interplay of energy transfer between QDs and charge transfer between the QDs and SLG. By studying the steady-state and time-resolved photoluminescence spectroscopy of hybrid QD−SLG devices, we observe a subtle interplay of short-and long-range energy transfer between cadmium selenide (CdSe) QDs in a compact monolayer solid film placed in close proximity to an SLG and the charge transfer from the QD solid to SLG. At larger separation, δ, between the compact monolayer QD and SLG, the emission properties are dominated by mutual energy transfer between the QDs. At relatively smaller separation the emission from QDs, which is strongly quenched, is dominated by charge transfer between QDs and SLG. In addition, we are also able to tune the relative strength of energy and charge transfer by electrostatic doping through the back gate voltage, which provides a novel pathway to tune emission properties of these devices for possible applications as photodetectors, in photovoltaics, and for sensing.

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Resonant Enhancement of Photoluminescence Intensity and Anisotropy of Quantum Dot Monolayers with Self-Assembled Gold Nanorods

Cited by 5 publications

References 28 publications

Enhancing Carrier Diffusion Length and Quantum Efficiency through Photoinduced Charge Transfer in Layered Graphene–Semiconducting Quantum Dot Devices

Enhancing Carrier Diffusion Length and Quantum Efficiency through Photoinduced Charge Transfer in Layered Graphene–Semiconducting Quantum Dot Devices

A Review on Quantum Dot‐Based Color Conversion Layers for Mini/Micro‐LED Displays: Packaging, Light Management, and Pixelation

Electrical Tuning of Optical Properties of Quantum Dot–Graphene Hybrid Devices: Interplay of Charge and Energy Transfer

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