Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product

Nie, Hui; Anselm, K.A.; Lenox, C.; Yuan, Ping; Hu, Chong; Kinsey, Geoffrey S.; Streetman, B. G.; Campbell, Joe C.

doi:10.1109/68.661426

Cited by 69 publications

(25 citation statements)

References 15 publications

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“…Meier investigated APDs grown by MBE with charge-layer doping levels varying from 2:3 Â 10 17 cm À3 to 2:7 Â 10 17 cm À3 [5] and presented current-voltage (I-V) characteristics of the APD devices. Nie on the gain-bandwidth product (GBP) of APDs designed for telecommunication purposes [6]. Charge-layer doping levels of 4:4 Â 10 17 cm À3 ; 5:3 Â 10 17 cm À3 ; 7 Â 10 17 cm À3 have been studied.…”

Section: Introductionmentioning

confidence: 99%

Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Infrared Physics & Technology

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Section: Introductionmentioning

confidence: 99%

Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Infrared Physics & Technology

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“…To remedy this sensitivity-versus-speed tradeoff, a number of novel structures have been developed. Lenox et al reported a gain-bandwidth product (GBP) of 290 GHz using a thin resonant-cavity InGaAs-InAlAs APD [1] and Nie et al showed a GBP of 290 GHz using resonant-cavity separate absorption-charge-multiplication (InGaAs-AlGaAs) APD [3]. Later, Kinsey et al reported a record GBP of 320 GHz using the edge-coupled waveguide APD [4].…”

Section: Introductionmentioning

confidence: 99%

Gain-bandwidth product optimization of heterostructure avalanche photodiodes

Hayat

Campbell

Saleh

et al. 2005

J. Lightwave Technol.

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Abstract-A generalized history-dependent recurrence theory for the time-response analysis is derived for avalanche photodiodes with multilayer, heterojunction multiplication regions. The heterojunction multiplication region considered consists of two layers: a high-bandgap Al 0 6 Ga 0 4 As energy-buildup layer, which serves to heat up the primary electrons, and a GaAs layer, which serves as the primary avalanching layer. The model is used to optimize the gain-bandwidth product (GBP) by appropriate selection of the width of the energy-buildup layer for a given width of the avalanching layer. The enhanced GBP is a direct consequence of the heating of primary electrons in the energy-buildup layer, which results in a reduced first dead space for the carriers that are injected into the avalanche-active GaAs layer. This effect is akin to the initial-energy effect previously shown to enhance the excess-noise factor characteristics in thin avalanche photodiodes (APDs). Calculations show that the GBP optimization is insensitive to the operational gain and the optimized APD also minimizes the excess-noise factor.

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“…Two approaches to increase the responsivity are optical gain, described as follows, and avalanche gain [11]- [19]. Approaches to increase the saturation power are increasing the carrier velocity using a uni-traveling carrier PD (UTC-PD) [2], [20], [21] or reducing the optical modal absorption constants and increasing absorption lengths in traveling-wave photodetector (TWPD), WGPD, or periodic traveling-wave photodetector (P-TWPD) structures [10], [22]- [24].…”

mentioning

confidence: 99%

Traveling-Wave Photodetectors With High Power–Bandwidth and Gain–Bandwidth Product Performance

Lasaosa

Shi

Pasquariello

et al. 2004

IEEE J. Select. Topics Quantum Electron.

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Abstract-Traveling-wave photodetectors (TWPDs) are an attractive way to simultaneously maximize external quantum efficiency, electrical bandwidth, and maximum unsaturated output power. We review recent advances in TWPDs. Record high-peak output voltage together with ultrahigh-speed performance has been observed in low-temperature-grown GaAs (LTG-GaAs)-based metal-semiconductor-metal TWPDs at the wavelengths of 800 and 1300 nm. An approach to simultaneously obtain high bandwidth and high external efficiency is a traveling-wave amplifier-photodetector (TAP detector) that combines gain and absorption in either a sequential or simultaneous traveling-wave structure.

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Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product

Cited by 69 publications

References 15 publications

Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Gain-bandwidth product optimization of heterostructure avalanche photodiodes

Traveling-Wave Photodetectors With High Power–Bandwidth and Gain–Bandwidth Product Performance

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