Resonant cavity light-emitting diode

Abstract

A novel concept of a light-emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emission from the active region is restricted to the modes of the cavity. Resonant cavity light-emitting diodes (RCLED) have higher spectral purity and higher emission intensity as compared to conventional light emitting diodes. Results on a top-emitting RCLED structure with AlAs/Al,Gai _ As quarter wave mirrors grown by molecular beam epitaxy are presented. The experimental emission linewidth is 17 meV (0.65 kT) at room temperature. The top-emission intensity is a factor of 1.7 higher as compared to conventional LEDs.

Inorganic Semiconductors for Light‐emitting Diodes

“…At the beginning of the 1990s, the resonant-cavity light-emitting diode (RCLED) was demonstrated, initially in the GaAs material system [17], shown in Fig. 1.6, and subsequently in organic light-emitting materials [14].…”

Modified spontaneous emission from a two-dimensional photonic bandgap crystal slab

“…5 The fundamental spontaneousemission properties of the device can also be modified, for example, by use of a Fabry-Perot microcavity. 6 However, these resonant cavity LED's modify the emission in only a narrow spectral range.…”

Optoelectronic Devices Employing One-Dimensional Photonic Structures

“…A practical realization of such device is a resonant cavity enhanced light emitting diode (RC LED). Such diode was for the first time realized by Schubert et al [14], and later by others [15][16][17]. One of such realization is a device designed for the emission at 1000 nm in which the 8 nm thick InGaAs quantum wells located in a GaAs slab are enclosed by two DBR [18].…”