Resonant cavity-enhanced (RCE) photodetectors

Kishino, Katsumi; Ünlü, M. Selim; Chyi, Jen‐Inn; Reed, J.; Arsenault, L.; Morkoç̌, H.

doi:10.1109/3.83412

Cited by 325 publications

(170 citation statements)

References 20 publications

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“…The theoretical result is also in very good agreement with recently published experimental data on high-speed RCE Schottky photodiodes (Jervase, 2000), , and high-speed Si-based RCE photodetectors (Ozbay, 1997). With reference to Figure 2, the use of the free spectral range (FSR) to the wavelength full width at half maximum (FWHM) as a measure of wavelength selectivity of detection (Kishino, 1991) is no longer valid. The conventional quality factor definition used for filters design defined as the ratio of λ 0 to the FWHM is more appropriate in this case as a measure of selectivity (Jervase, 2000).…”

Section: Resultssupporting

confidence: 74%

“…It then follows that (Kishino, 1991), (Jervase, 1998) This expression is used in a constrained optimization procedure for the design of RCE photodetectors with maximum quantum efficiency. Equation 5 serves as a check on the optimized values (L 1 , L 2 , d) in whether they yield the maximum quantum efficiency.…”

Section: Discussionmentioning

confidence: 99%

“…In fact, the typical PIN photodiode configuration (Dentan, 1990) has been integrated in our proposed configuration for its simplicity and ease of fabrication as well as its realistic mathematical description. The expression for quantum efficiency for the RCE photodetector shown in Figure 1 will be derived following a similar approach to that used in (Kishino, 1991) and (Jervase, 1998). This technique is based on finding the reflectivities of the top and bottom mirrors separately and then using their values to determine the fields inside the cavity by considering the whole structure of the photodetector i.e.…”

Section: Introductionmentioning

confidence: 99%

“…Their quantum efficiency and optical bandwidth characteristics are of major importance in the design of fiber optic based data communication systems. A number of structures and design optimization techniques have been proposed in the literature to achieve high values for these two parameters (Kishino, 1991), (Unlu, 1992(Unlu, , 1995, (Tan, 1995), , (Tung, 1997), (Jervase, 1998(Jervase, , 2000. One of the promising types is the Resonant Cavity Enhanced (RCE) photodetector.…”

Section: Introductionmentioning

confidence: 99%

“…One of the promising types is the Resonant Cavity Enhanced (RCE) photodetector. In the RCE, the active region is placed inside a Fabry-Perot cavity between two mirrors made of quarter-wave stacks (QWS) to allow the signal light to have more than one absorbing path inside the active region (Kishino, 1991), (Unlu, 1992(Unlu, , 1995, (Tan, 1995), , (Tung, 1997), (Jervase, 1998(Jervase, , 2000, , (Ozbay, 1997). The resulting structure will need only a very thin absorbing intrinsic region to achieve high quantum efficiency as well as a high speed of response.…”

Section: Introductionmentioning

confidence: 99%

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Design of Ultra Fast RCE Photodetectors for Optical Communications systems

Jervase

Bourdoucen

2002

SQU Journal for Science

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Two key parameters for RCE photodetectors that govern their suitability for ultrafast optical communication systems are considered. These are the quantum efficiency and the bandwidth efficiency product. A closed analytical form has been derived for quantum efficiency, which incorporates the structural parameters of the photodetector. Based on the simulation results, an optimization and design procedure for these photodetectors has been developed.

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Section: Resultssupporting

confidence: 74%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Design of Ultra Fast RCE Photodetectors for Optical Communications systems

Jervase

Bourdoucen

2002

SQU Journal for Science

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Resonant-Cavity-Enhanced UV Metal-Semiconductor-Metal (MSM) Photodetectors Based on AlGaN System

Kishino

Yonemaru

Kikuchi

et al. 2001

phys. stat. sol. (a)

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Resonant-cavity-enhanced ultraviolet metal-semiconductor-metal photodetectors were successfully fabricated in AlGaN system, for the first time. A 45 nm GaN light absorption layer was placed in the optical cavity composed by the multi-stacked Al 0.06 Ga 0.94 N/AlN (20 pairs) bottom-distributedBragg-reflector (DBR) and the ZrO 2 /SiO 2 (two pairs) top-DBR mirrors. In this structure, the enhancement of responsivity can be achieved by incorporating a multiple pass detection scheme. In the experiment, the responsivity was enhanced by the resonant cavity effect, selectively at 363 and 352 nm in wavelength, with a factor of about two, in contrast with the case without the top-DBR.Introduction Ultraviolet (UV) photo-detectors (PDs) are extensively investigated for their potential applications to solar UV monitoring (visible-and solar-blind detections), flame sensors, space communications and so on. AlGaN compounds are promising materials for UV-PDs, due to its superior material properties, such as wide-and directband-gap, radiation hardness, high temperature resistance, and high saturation electron drift velocity. So far, AlGaN-based UV-PDs have been fabricated on Al 2 O 3 substrates, with various detection schemes of metal-semiconductor-metal (MSM) PDs [1, 2], Schottky photovoltaic detectors [3], and pin photodiodes [4]. These PDs consist of a single pass detection scheme, which is responsive to a wide wavelength range below the band-edge of an absorption layer.Meanwhile, in the resonant-cavity-enhanced (RCE) detection scheme [5, 6], a single absorption layer serves many times in generating photo-carriers (a multi-pass detection scheme), and the responsivity is enhanced dramatically at resonant wavelengths due to its resonant-cavity effect. Thus it can detect only for a specific UV line, such as an atomic UV-emission line. Furthermore, a proper design of the resonant cavity may produce h over 80-90% even for a thin absorption layer thickness d [5]. In the first report, RCE-PDs were performed with AlGaAs/GaAs heterojunction photo-transistors (HPT) [7], GaInAs/AlInAs Schottky PDs [8], followed by the theoretical formulation and the systematic analysis of RCE-PDs [5]. Following that, various RCE-PDs with high-performance were demonstrated, for example InGaAs/InP p-i-n RCE-PD with h of 0.8 for d ¼ 200 nm [9], and the GaAs/AlGaAs RCE-Schottky-PD with h of 0.5 for d ¼ 150 nm [10].In this paper, AlGaN-based UV-PDs with the RCE detection scheme are discussed theoretically and RCE-UV-MSM-PDs with GaN absorption layers were fabricated for

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Improved Responsivity of AlGaN-Based Resonant Cavity-Enhanced UV Photodetectors Grown on Sapphire by RF-MBE

Yonemaru¹,

Kikuchi²,

Kishino³

2002

phys. stat. sol. (a)

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AlGaN-based resonant cavity-enhanced ultraviolet metal-semiconductor-metal photodetectors (PDs) were grown on sapphire substrates without metalorganic chemical vapor deposition (MOCVD)-grown GaN templates by radio frequency plasma-assisted molecular beam epitaxy (RF-MBE). In the resonant cavity-enhanced (RCE) detection scheme, the responsivity of PDs is enhanced dramatically at the resonant wavelength. In the experiment, the responsivity was enhanced by the resonant cavity effect, selectively at wavelengths of 364 and 357 nm, by a factor of about two. The peak responsivities were 1.2 and 1.5 A/W at 364 and 357 nm, respectively.

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Resonant cavity-enhanced (RCE) photodetectors

Cited by 325 publications

References 20 publications

Design of Ultra Fast RCE Photodetectors for Optical Communications systems

Design of Ultra Fast RCE Photodetectors for Optical Communications systems

Resonant-Cavity-Enhanced UV Metal-Semiconductor-Metal (MSM) Photodetectors Based on AlGaN System

Improved Responsivity of AlGaN-Based Resonant Cavity-Enhanced UV Photodetectors Grown on Sapphire by RF-MBE

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