Resonant Auger spectroscopy at the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>L</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mo>,</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>shake-up thresholds as a probe of electron correlation effects in nickel

Magnuson, Martin; Wassdahl, N.; Nilsson, Anders; Föhlisch, Alexander; Nordgren, Joseph; Mårtensson, Nils

doi:10.1103/physrevb.58.3677

Cited by 27 publications

(20 citation statements)

References 33 publications

(83 reference statements)

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“…For x =0.05, the double-peak structure has essentially vanished in comparison to at x =0.16 due to the superposition of the strong fcc contribution. (iv) The 6-eV feature [19,31] above the main 2p 3/2 peak is prominent in Ni metal x =0.0) that is associated with electron correlation effects and narrow-band phenomena [32]. The intensity of the 6-eV feature is very low in the Ni 1−x C x films in comparison to Ni metal even at x =0.05 due to more delocalized bands.…”

Section: Resultsmentioning

confidence: 99%

Crystallization characteristics and chemical bonding properties of nickel carbide thin film nanocomposites

Furlan

Hultman

et al. 2014

J. Phys.: Condens. Matter

113

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The crystal structure and chemical bonding of magnetron-sputtering deposited nickel carbide Ni₁-xCx (0.05 ⩽ x⩽0.62) thin films have been investigated by high-resolution x-ray diffraction, transmission electron microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, and soft x-ray absorption spectroscopy. By using x-ray as well as electron diffraction, we found carbon-containing hcp-Ni (hcp-NiCy phase), instead of the expected rhombohedral-Ni₃C. At low carbon content (4.9 at%), the thin film consists of hcp-NiCy nanocrystallites mixed with a smaller amount of fcc-NiCx. The average grain size is about 10-20 nm. With the increase of carbon content to 16.3 at%, the film contains single-phase hcp-NiCy nanocrystallites with expanded lattice parameters. With a further increase of carbon content to 38 at%, and 62 at%, the films transform to x-ray amorphous materials with hcp-NiCy and fcc-NiCx nanodomain structures in an amorphous carbon-rich matrix. Raman spectra of carbon indicate dominant sp(2) hybridization, consistent with photoelectron spectra that show a decreasing amount of C-Ni phase with increasing carbon content. The Ni 3d-C 2p hybridization in the hexagonal structure gives rise to the salient double-peak structure in Ni 2p soft x-ray absorption spectra at 16.3 at% that changes with carbon content. We also show that the resistivity is not only governed by the amount of carbon, but increases by more than a factor of two when the samples transform from crystalline to amorphous.

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Section: Resultsmentioning

confidence: 99%

Crystallization characteristics and chemical bonding properties of nickel carbide thin film nanocomposites

Furlan

Hultman

et al. 2014

J. Phys.: Condens. Matter

113

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“…In addition, it is possible to determine whether the intrinsic satellites arise from initial-state or finalstate effects. [3][4][5][6][7] In spite of the interesting and unique information on the electronic structure of the materials that can be obtained from such data, only few studies are available so far which deal with the mechanisms of the creation of satellite peaks accompanying purely inner-shell transitions in solids. 7 The 3d transition metals, their alloys, and compounds are especially interesting in this respect due to the strong effects of electron correlation on the particular transitions.…”

Section: Introductionmentioning

confidence: 99%

Initial- and final-state excitations inKL23L23Auger spectra of Cu and Ni metals, induced near threshold

et al. 2006

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High-energy resolution KL 23 L 23 Auger spectra of polycrystalline Cu and Ni metals were measured while tuning the energy of the exciting x-rays in the near threshold region up to 50 eV above the K absorption edge. The intensity evolution of the pronounced satellite lines as a function of photon energy reveals different behavior for particular satellites as a consequence of initial state and final state shake excitations. The satellite intensity development near threshold is compared to predictions of different simple models based on the free atom approximation. The observed energy separations between the satellites and the 1 D 2 main diagram line is in accord with results from a cluster molecular orbital model and confirms the assignment based on the satellite intensity evolution curves concerning the origin of the satellites.

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“…For conducting and metallic systems the L 3 / L 2 ratio is usually higher than the statistical ratio 2:1, but for the GaN semiconductor, the Coster-Kronig process is quenched by the band gap. [37][38][39] The larger M 3 / M 2 ratio for pure Ga is thus a signature of better conductivity than for the GaN semiconductor.…”

Section: B Ga M 1 and M 23 X-ray Emissionmentioning

confidence: 99%

Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods

et al. 2010

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The electronic structure and chemical bonding of wurtzite-GaN investigated by N 1s soft x-ray absorption spectroscopy and N K, Ga M 1 , and Ga M 2,3 emission spectroscopy is compared to that of pure Ga. The measurements are interpreted by calculated spectra using first-principles density-functional theory ͑DFT͒ including dipole transition matrix elements and additional on-site Coulomb interaction ͑WC-GGA+ U͒. The Ga 4p-N 2p and Ga 4s-N 2p hybridization and chemical bond regions are identified at the top of the valence band between −1.0 and −2.0 and further down between −5.5 and −6.5 eV, respectively. In addition, N 2s-N 2p-Ga 4s and N 2s-N 2p-Ga 3d hybridization regions occur at the bottom of the valence band between −13 and −15 eV, and between −17.0 and −18.0 eV, respectively. A bandlike satellite feature is also found around −10 eV in the Ga M 1 and Ga M 2,3 emission from GaN, but is absent in pure Ga and the calculated ground-state spectra. The difference between the identified spectroscopic features of GaN and Ga are discussed in relation to the various hybridization regions calculated within band-structure methods.

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Resonant Auger spectroscopy at theL2,3shake-up thresholds as a probe of electron correlation effects in nickel

Cited by 27 publications

References 33 publications

Crystallization characteristics and chemical bonding properties of nickel carbide thin film nanocomposites

Crystallization characteristics and chemical bonding properties of nickel carbide thin film nanocomposites

Initial- and final-state excitations inKL23L23Auger spectra of Cu and Ni metals, induced near threshold

Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods

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