Resonant and nondissipative tunneling in independently contacted graphene structures

Vasko, F. T.

doi:10.1103/physrevb.87.075424

Cited by 38 publications

(47 citation statements)

References 22 publications

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“…In particular, the double-GL structures with the inter-GL tunneling or thermionic conductance can be used in the resonant THz detectors and photomixers [5,6]. As was recently discussed [7][8][9] and realized experimentally [10], the inter-GL resonant tunneling (RT) in the double-GL structures, with the band diagrams properly aligned by the applied voltage, leads to inter-GL negative differential conductivity (NDC) and enables novel transistor designs with the multi-valued current-voltage characteristics. A strong nonlinearity of the inter-GL current-voltage characteristics at the voltages near tunneling resonance can be used in double-GLbased frequency multipliers [8], detectors [5], and other microwave and THz devices.…”

Section: Introductionmentioning

confidence: 99%

Dynamic effects in double graphene-layer structures with inter-layer resonant-tunnelling negative conductivity

Ryzhii¹,

Satou²,

Otsuji³

et al. 2013

J. Phys. D: Appl. Phys.

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We study the dynamic effects in the double graphene-layer (GL) structures with the resonanttunneling (RT) and the negative differential inter-GL conductivity. Using the developed model, which accounts for the excitation of self-consistent oscillations of the electron and hole densities and the ac electric field between GLs (plasma oscillations), we calculate the admittance of the double-GL RT structures as a function of the signal frequency and applied voltages, and the spectrum and increment/decrement of plasma oscillations. Our results show that the electron-hole plasma in the double-GL RT structures with realistic parameters is stable with respect to the self-excitation of plasma oscillations and aperiodic perturbations. The stability of the electron-hole plasma at the bias voltages corresponding to the inter-GL RT and strong nonlinearity of the RT currentvoltage characteristics enable using the double-GL RT structures for detection of teraherz (THz) radiation. The excitation of plasma oscillations by the incoming THz radiation can result in a sharp resonant dependence of detector responsivity on radiation frequency and the bias voltage. Due to a strong nonlinearity of the current-voltage characteristics of the double-GL structures at RT and the resonant excitation of plasma oscillations, the maximum responsivity, R max V , can markedly exceed the values (10 4 − 10 5 ) V/W at room temperature.

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Section: Introductionmentioning

confidence: 99%

Dynamic effects in double graphene-layer structures with inter-layer resonant-tunnelling negative conductivity

Ryzhii¹,

Satou²,

Otsuji³

et al. 2013

J. Phys. D: Appl. Phys.

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“…1 (lower panel). In this case, the tunneling inter-GL transitions are possible only due to the scattering processes accompanying the tunneling [19][20][21]. However, the inter-GL transitions assisted by the emission of photons with the polarization corresponding to the photon electric field perpendicular to GLs (along the axis z) conserve the electron momentum and, hence, do not require any scattering (resonant-tunneling photon-assisted transitions).…”

mentioning

confidence: 99%

“…These structures can exhibit marked inter-GL tunneling current, which in the case of the Dirac point alignment, exhibit the negative differential inter-GL conductivity [18] (see also Refs. [19][20][21], where the latter effect was theoretically considered). The inter-GL barrier layers can be made of hBN, WS 2 , or similar materials.…”

mentioning

confidence: 99%

Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure

Ryzhii

Dubinov

Aleshkin

et al. 2013

Applied Physics Letters

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We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude absorption in GLs and show that the gain can exceed the losses in metal-metal waveguides at the low end of the THz range. The spectrum of the emitted photons can be tuned by the applied voltage. A weak temperature dependence of the THz gain promotes an effective operation at room temperature.The gapless energy spectrum of graphene layers (GLs) [1] enables the creation of different terahertz (THz) devices utilizing the interband transition. In particular, the interband population inversion and the pertinent negativity of the dynamic conductivity in GLs [2,3] due to the optical or injection pumping can be used in GL-based THz lasers [4][5][6][7][8][9]. First experimental results on the THz emission from optically excited GLs [10] (see also review paper [11] and references therein) instill confidence in the realization of such lasers. One of the obstacles, limiting the achievement of the negative dynamic conductivity in the range of a few THz, is the reabsorption of the photons with the in-plane polarization emitted at the interband transitions due to the intraband transitions (the Drude absorption). Similar situation takes place in the quantum cascade lasers (QCLs) based on multiple quantum well (MQW) structures [12]. However, in the case of the photon polarization perpendicular to the QW plane the intraband (intrasubband) absorption can be much weaker than that following from the semi-classical Drude formula [13].In this paper, we propose a device structure based on a double-GL structure shown in Fig. 1 (upper panel) with the injection of electrons to one n-doped GL and to another p-doped GL, which can be used for lasing of THz photons with the electric field perpendicular to the GL plane due to the tunneling inter-GL radiative processes. The structure band diagram under the applied bias voltage and tunneling transitions assisted with the emission of photons with the energy ω ∼ ∆, where ∆ is the energy distance (gap) between the Dirac points in GLs, are demonstrated in Fig. 1 (lower panel). These transitions take place from the conduction band of the GL with 2DEG to the empty conduction band of GL with 2DHG. The transition from the filled valence band the former GL to the empty portion of the valence band of the latter GL also contribute to the emission of photons with ω ∼ ∆. The structure comprises two GLs with the side contact at one of the GL edges. This double-GL structure plays the role of the laser active region. The opposite edge of GL is isolated from another contact. A narrow tunneling-transparent barrier separates GLs (its thickness d is about few nanometers). The applied bias voltage V provides the formation of the two-dimensional electron and hole gases (2DEG and 2DHG) in the upper and lower GLs, respectively owing to the injection from the side contacts, so that the ...

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“…represents the effective Hamiltonian of the Bernal graphene bilayer and γ is the transition matrix depicting the tunnel coupling between the twisted monolayer and the Bernal bilayer [35]. Fig.…”

Section: Out-of-plane Valley-polarized Quantum Tunnelingmentioning

confidence: 99%

“…3(a)) can be realized by inserting a thin insulator, such as thin hexagonal boron nitride, between the two graphene systems, as demonstrated in experiments very recently [2,9,17]. Theoretical descriptions of the quantum tunneling between parallel 2D conductors have been studied with great success for many years [33][34][35][36][37], and the Hamiltonian to describe the tunneling system in Fig. 3(a) should be…”

Section: Out-of-plane Valley-polarized Quantum Tunnelingmentioning

confidence: 99%

In-plane chiral tunneling and out-of-plane valley-polarized quantum tunneling in twisted graphene trilayer

Qiao

2014

Phys. Rev. B

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Resonant and nondissipative tunneling in independently contacted graphene structures

Cited by 38 publications

References 22 publications

Dynamic effects in double graphene-layer structures with inter-layer resonant-tunnelling negative conductivity

Dynamic effects in double graphene-layer structures with inter-layer resonant-tunnelling negative conductivity

Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure

In-plane chiral tunneling and out-of-plane valley-polarized quantum tunneling in twisted graphene trilayer

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