Abstract:We present experimental and theoretical studies of the magnetoresistance
oscillations induced by resonance transitions of electrons between
tunnel-coupled states in double quantum wells. The suppression of these
oscillations with increasing temperature is irrelevant to the thermal
broadening of the Fermi distribution and reflects the temperature dependence of
the quantum lifetime of electrons. The gate control of the period and amplitude
of the oscillations is demonstrated.Comment: 5 pages 4 figures, to be pub… Show more
“…This statement is well justified from the point of view of bulk transport theory and is confirmed in numerous experiments. [8][9][10][11]18,[23][24][25] In addition, the theoretical model of dissipative MW photoresistance based on a consideration of the inelastic mechanism 6 explains satisfactorily all features of MIRO's (including frequency, power, and temperature dependence) for different two-subband systems studied in our experiments (see, e.g., Refs. 8 and 10).…”
The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic-field reversal in the microwave-induced Hall resistance R xy , whereas the dissipative resistance R xx obeys even symmetry. Studies of R xy as a function of the microwave electric field and polarization exhibit a strong and nontrivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconductivity.
“…This statement is well justified from the point of view of bulk transport theory and is confirmed in numerous experiments. [8][9][10][11]18,[23][24][25] In addition, the theoretical model of dissipative MW photoresistance based on a consideration of the inelastic mechanism 6 explains satisfactorily all features of MIRO's (including frequency, power, and temperature dependence) for different two-subband systems studied in our experiments (see, e.g., Refs. 8 and 10).…”
The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic-field reversal in the microwave-induced Hall resistance R xy , whereas the dissipative resistance R xx obeys even symmetry. Studies of R xy as a function of the microwave electric field and polarization exhibit a strong and nontrivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconductivity.
“…To analyze the spectrum the obtained eigenvalues of the Hamiltonian are numerated in ascending order using positive integer index l=1,2.... Eqs. (8,9,10) yield the electron spectrum obtained in a rigid electrostatic potential V (z) that provides a good agreement with experimental data. We relate this agreement with a large gap ∆ 12 between subbands indicating strong electrostatic potential V (z) in the system.…”
Section: B Effect Of In-plane Magnetic Fieldsupporting
confidence: 67%
“…An in-plane magnetic field, B , provides an additional coupling via Lorentz force coming from the last term in Eq. (8). This additional B -coupling preserves the degeneracy of the quantum levels but induces variations of the electron spectrum, which, due to a relativistic origin of Lorentz force, are dependent on the energy (velocity).…”
Section: B Effect Of In-plane Magnetic Fieldmentioning
confidence: 99%
“…(9) describes diamagnetic shift of the quantum levels and is related to the fifth term in Eq. (8). In the basis set |N, ξ the diamagnetic term is proportional to ξ|z 2 |ξ .…”
Section: B Effect Of In-plane Magnetic Fieldmentioning
confidence: 99%
“…[5][6][7][8][9][10] These magneto-inter-subband oscillations (MISO) of the resistance are due to an alignment between Landau levels from different subbands i and j with corresponding energies E i and E j . Resistance maxima occur at magnetic fields at which the gap between the bottoms of subbands, ∆ ij = E i − E j , equals a multiple of the Landau level spacing,hω c : ∆ ij = k ·hω c , where k is an integer [11][12][13][14] .…”
Transport properties of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands placed in titled magnetic fields are studied at high temperatures. Quantum positive magnetoresistance (QPMR) and magneto-intersubbands resistance oscillations (MISO) are observed in quantizing magnetic fields, B ⊥ , applied perpendicular to the 2D layer. QPMR displays contributions from electrons with considerably different quantum lifetimes, τ (1,2) q , confirming the presence of two subbands in the studied system. MISO evolution with B ⊥ agrees with the obtained quantum scattering times only if an additional reduction of the MISO magnitude is applied at small magnetic fields. This indicates the presence of a yet unknown mechanism leading to MISO damping. Application of in-plane magnetic field produces a strong decrease of both QPMR and MISO magnitude. The reduction of QPMR is explained by spin splitting of Landau levels indicating g-factor, g ≈0.4, which is considerably less than the g-factor found in GaAs quantum well with a single subband populated. In contrast to QPMR the decrease of MISO magnitude is largely related to the in-plane magnetic field induced entanglement between quantum levels in different subbands that, in addition, increases the MISO period.
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