Resonance Fluorescence from Waveguide-Coupled, Strain-Localized, Two-Dimensional Quantum Emitters

Errando-Herranz, Carlos; Schöll, Eva; Picard, Raphaël; Laini, Micaela; Gyger, Samuel; Elshaari, Ali W.; Branny, Art; Wennberg, Ulrika; Barbat, Sebastien; Renaud, Thibaut; Sartison, Marc; Brotons‐Gisbert, Mauro; Bonato, Cristian; Gerardot, Brian D.; Zwiller, Val; Jöns, Klaus D.

doi:10.1021/acsphotonics.0c01653

Cited by 40 publications

(42 citation statements)

References 44 publications

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“…The work opens exciting opportunities for quantum interference experiments with defects in hBN. Development of cross polarization schemes to collect ZPL photons should be implemented using waveguide structures [40][41][42][43]. This is certainly within reach with the currently available nanofabrication techniques and will enable substantially more photons.…”

Section: (B) Broadening Of the Emission Linewidth Is Demonstrated As ...mentioning

confidence: 99%

Phonon dephasing and spectral diffusion of quantum emitters in hexagonal boron nitride

White

Stewart

Solntsev

et al. 2021

Optica

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Quantum emitters in hexagonal boron nitride (hBN) are emerging as bright and robust sources of single photons for applications in quantum optics. In this work we present detailed studies on the limiting factors to achieve Fourier Transform limited spectral lines. Specifically, we study phonon dephasing and spectral diffusion of quantum emitters in hBN viaresonant excitation spectroscopy at cryogenic temperatures. We show that the linewidths of hBN quantum emitters are phonon broadened, even at 5K, with typical values of the order of ~ one GHz. While spectral diffusion dominates at increasing pump powers, it can be minimized by working well below saturation excitation power. Our results are important for future utilization of quantum emitters in hBN for quantum interference experiments.

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Section: (B) Broadening Of the Emission Linewidth Is Demonstrated As ...mentioning

confidence: 99%

Phonon dephasing and spectral diffusion of quantum emitters in hexagonal boron nitride

White

Stewart

Solntsev

et al. 2021

Optica

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“…The second field is coupling TMD emitters into external waveguides for optoelectronic applications. [40,[60][61][62][63][64] It is crucial to accurately position the emitters with deterministic wavelengths for scalable and on-chip integration of photonic devices.…”

Section: Resultsmentioning

confidence: 99%

Deterministic and Scalable Generation of Exciton Emitters in 2D Semiconductor Nanodisks

Feng

Zou

Cong

et al. 2022

Advanced Optical Materials

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valley coupling with the carrier spin, [1][2][3][4] robust exciton and trion emission [5] sensitive to biochemical molecular doping, [6,7] many-body [8,9] and valley [10][11][12][13][14][15][16] physics, and great potential in optoelectronic applications for novel photodetector, [17] electroluminescence light source, [18,19] and lasers. [20] Furthermore, single-photon emitters [21][22][23][24] were found in the transition metal dichalcogenide (TMD) semiconductors, which could serve as a cornerstone for quantum information and communication applications in the visible to near infrared region. [25] Up to date the precise nature of these TMD emitters is still under debate and requires further experimental investigation. Generally, these emitters are attributed to excitons trapped in defectinduced potentials which can be tuned by strain gradient and defect engineering. [26] However, dilute quantum emitters exhibiting narrow photoluminescence (PL) peaks were found in these TMDs and their peak wavelengths were diversely distributed across the broad spectral region. The other candidate for 2D quantum emitter is the twisted TMD heterostructure (i.e., two different TMD monolayers stacked together) with interlayer excitons trapped in periodic Moiré potentials, [27,28] which can be regarded as programmable quantum emitter arrays. [29,30] In recent cryogenic measurements, narrow photoluminescence (PL) peaks due to diverse quantum emitters have been found at random locations of monolayer transition metal dichalcogenides (TMDs), which impedes precise optoelectronic applications. Thus, it is of great importance to truly regulate these localized exciton emissions by deterministic spatial and spectral control. Here, such desired emission is primarily demonstrated in monolayer WS 2 nanodisks. The size-dependent PL studies indicate the clear evolution from the broad defect-band emission to a set of spectrally isolated narrow peaks (linewidth of ≈ sub nm) at 4.2 K, which is associated with the prevailing effect of edge defects with the shrinkage of the disk diameter, providing a narrow emission energy range for bound excitons. When the disk diameter is reduced to 300 nm, more than 80% of emitter peaks are located between 610 and 616 nm, verifying the effective control of emission wavelength of these photon emitters. Furthermore, the strategy is extended to prepare scalable WS 2 nanodisk arrays based on flakes of hundreds of µm, and size-dependent narrow emissions of WSe 2 nanodisks are testified. This work develops a defect-engineering strategy to generate localized exciton emitters toward the promising TMD-based optoelectronic applications.

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“…However, the optical waveguide mode has only a weak overlap with the dipole at the edge of the photonic structure, therefore the coupling efficiency is still small. [148,149] In the future, optimized waveguide geometries or the introduction of cavities might allow to overcome this issue and enhance the coupling.…”

Section: Coupling To Waveguidesmentioning

confidence: 99%

“…The SPEs in

{WSe}_{2}

are activated by strain, which can be induced by placing a monolayer of

{WSe}_{2}

onto a steep edge of a pre‐patterned substrate. By stamping a monolayer onto a

{Si}_{3} {normalN}_{4}

waveguide, [ 148,149 ] SPEs appear at the edge of the waveguide and couple to the waveguide ( Figure 7 a). However, the optical waveguide mode has only a weak overlap with the dipole at the edge of the photonic structure, therefore the coupling efficiency is still small.…”

Section: Perspectives and Applicationsmentioning

confidence: 99%

Single‐Photon Emitters in Layered Van der Waals Materials

Vasconcellos

Wigger

Wurstbauer

et al. 2022

Physica Status Solidi (b)

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Figure 2. a) SPEs appear as bright localized PL spots at edges and folds in a WSe 2 monolayer. Reproduced with permission. [4] Copyright 2015, Optical Society of America. b) Antibunching and photon cascade from an exciton-biexciton emitter system in GaSe. Reproduced with permission. [9] Copyright 2017, IOP Publishing Ltd. c) Photoluminescence of positioned emitters in MoS 2 . Adapted with permission. [113] Copyright 2021, American Chemical Society. d) Polarization scan of the PL spectrum of a WSe 2 emitter showing exciton and biexciton transitions. The energy differences provide the biexciton binding and fine structure splitting energies. Reproduced under the terms of a Creative Commons Attribution 4.0 International license. [33]

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Resonance Fluorescence from Waveguide-Coupled, Strain-Localized, Two-Dimensional Quantum Emitters

Cited by 40 publications

References 44 publications

Phonon dephasing and spectral diffusion of quantum emitters in hexagonal boron nitride

Phonon dephasing and spectral diffusion of quantum emitters in hexagonal boron nitride

Deterministic and Scalable Generation of Exciton Emitters in 2D Semiconductor Nanodisks

Single‐Photon Emitters in Layered Van der Waals Materials

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