Resonance Conditions and Independent Resonance Energy Selection in Asymmetrical Rectangular Triple-Barrier Structures

Yamamoto, Hiroaki; Zhao, X.B.

doi:10.1002/(sici)1521-3951(200002)217:2<793::aid-pssb793>3.0.co;2-1

Cited by 4 publications

(6 citation statements)

References 6 publications

(7 reference statements)

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“…Although the resonance condition for the triple barrier structure has already been derived in Ref. 7, this is done only under a special condition [where the depth of the left well between the first and second barriers is equal to the incidence region (V 1 = V 4 ) and the second energy level is higher than the first barrier (E 2 > V 3 )]. The present Eqs.…”

Section: Perfect Resonance Conditionmentioning

confidence: 99%

“…To date, many studies have been carried out, both theoretically and experimentally [3][4][5][6][7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

“…This was followed by studies of triple barrier structures [5][6][7][8]. The triple barrier structure is not a simple extension of the double barrier structure, as many interesting phenomena have been reported.…”

Section: Introductionmentioning

confidence: 99%

“…The triple barrier structure is not a simple extension of the double barrier structure, as many interesting phenomena have been reported. These include two independent resonant energy values that depend on the left and right wells [7]. The current density versus voltage characteristic has a better peak-to-valley ratio than that in the double barrier structure [6,8].…”

Section: Introductionmentioning

confidence: 99%

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Theoretical analysis of tunneling phenomenon in asymmetrical triple‐barrier structures with outer wells

Takura¹,

Yamamoto²

2006

Electron Comm Jpn Pt II

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SUMMARYThe impact of the outer wells on tunneling characteristics is theoretically studied in a new structure with outer wells consisting of wells on both sides of an asymmetrical triple barrier structure. First, the theoretical equation for the transmission coefficient is derived and the resonance conditions are studied. It is found that resonance is not related to the existence of the outer wells and is governed by the two resonance conditions independently existing in the two wells between the barriers. Second, the dwell time of electrons at the two resonant energy values is analyzed. The dwell time in the triple barrier structure with outer wells is compressed to about 14% at the maximum in comparison with the dwell time in the triple barrier structure without outer wells. Even if the dwell time is compared with that in the structure with a prewell, which is a conventional way of reducing the dwell time, a reduction to about 60% is realized. Also, with regard to the current density versus voltage characteristics for the structure with outer wells, it is found that a large current flows at a lower voltage than in the structure without outer wells.

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Section: Perfect Resonance Conditionmentioning

confidence: 99%

“…To date, many studies have been carried out, both theoretically and experimentally [3][4][5][6][7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Theoretical analysis of tunneling phenomenon in asymmetrical triple‐barrier structures with outer wells

Takura¹,

Yamamoto²

2006

Electron Comm Jpn Pt II

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“…In this respect, the electron transmission and resonant tunneling in one dimensional structures is a current problem in theoretical and experimental investigations [1][2][3][4]. Based on resonant tunneling phenomenon, experimental research on resonant tunneling diodes [5][6][7] and resonant tunneling transistors [8][9][10] have been carried out.…”

Section: Introductionmentioning

confidence: 99%

Electron transmission in symmetric and asymmetric double-barrier structures controlled by laser fields

Aktaş

Bilekkaya

Boz

et al. 2015

Superlattices and Microstructures

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Theoretical analysis of resonant tunneling in triple‐barrier structures under electric fields

Arakawa

Yamamoto²,

Tanaka³

et al. 2002

Electron Comm Jpn Pt II

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SUMMARYAssuming a practical device application of resonant tunneling in a triple-barrier structure, equations for theoretical analysis of the tunneling transmission coefficient and the resonance condition are derived with regard to the tunneling phenomena in asymmetric triple-barrier structures in the presence of an applied bias. From the numerical analysis results, an interesting phenomenon not observed in structures with two or fewer barriers is found. As the bias voltage is increased, the transmission peak value of the resonant spectrum, which initially decreases, begins to increase again and several peaks with a spectral value of 1 (unity resonance) appear. At that time, the resonance condition is studied. Further, the effect of the tunneling transmission characteristics of triple-barrier structures on the voltage-current relationship in a triple-barrier resonant tunneling diode is studied. By means of the equations derived here, the resonant bias voltage in the triple-barrier structure can be determined. The conclusions derived in this paper are considered useful for the design of resonant tunneling devices using triple-barrier structures.

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Resonance Conditions and Independent Resonance Energy Selection in Asymmetrical Rectangular Triple-Barrier Structures

Cited by 4 publications

References 6 publications

Theoretical analysis of tunneling phenomenon in asymmetrical triple‐barrier structures with outer wells

Theoretical analysis of tunneling phenomenon in asymmetrical triple‐barrier structures with outer wells

Electron transmission in symmetric and asymmetric double-barrier structures controlled by laser fields

Theoretical analysis of resonant tunneling in triple‐barrier structures under electric fields

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