Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

Rashidi, Mohammad; Lloyd, Erika; Huff, Taleana; Achal, Roshan; Taucer, Marco; Croshaw, Jeremiah; Wolkow, Robert A.

doi:10.1021/acsnano.7b07068

Cited by 18 publications

(29 citation statements)

References 49 publications

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“…Due to the location of the (+) to (0) charge transition, high tunneling current appears when probing Δf in the expected bias range, making it challenging to maintain tip integrity and distinguish the DB charging from higher bulk current contributions. 59 By raising the electrostatic potential surrounding the DB with local fixed charges, 17 these charge transitions can be shifted in energy to a mid-gap region allowing for both charge transitions to be detected with Δf (V) spectroscopies. Fig.…”

Section: Resultsmentioning

confidence: 99%

Ionic charge distributions in silicon atomic surface wires

et al. 2021

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Section: Resultsmentioning

confidence: 99%

Ionic charge distributions in silicon atomic surface wires

et al. 2021

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“…Second, a small secondary dip or step is apparent at -0.36 V for both curves. This step has been reported to be the (+/0) charge transition level of the DB, 24 which due to the perturbation of the hydrogen becomes accessible in the voltage range being probed. After hydrogen removal (orange and pink curves), the (0/-) transition steps return to more negative values and are no longer offset from each other.…”

Section: Negative Hydrogenmentioning

confidence: 91%

Electrostatic Landscape of a Hydrogen-Terminated Silicon Surface Probed by a Moveable Quantum Dot

et al. 2019

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With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highlydoped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain. That species, suspected of being boron or perhaps a negatively charged donor

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“…Consequently, DBs have two charge transition levels, namely the neutral to negative (0/-) and positive to neutral (+/0) transitions. Crucially, because these DB energy levels lie within the bulk bandgap they are electronically isolated from the bulk 25,26 . Silicon DBs approach the ultimate small size (single atom) for a quantum dot and therefore exhibit larger energy level spacing, relaxing temperature requirements compared to larger conventional quantum dots 13 .…”

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“…The nc-AFM images and spectra in Fig. 1a-e characterize the neutral and negative charge states of an isolated DB (corresponding scanning tunneling microscopy (STM) details in Supporting Figure S1) 25 . In frequency shift (Δf) images, recorded at constant height and selected fixed biases ( Fig.…”

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confidence: 99%

“…Consequently, the step in Δf(V) in Fig. 1d corresponds to the transition of the DB between its negative (right of the step, I) and neutral (left of the step, II) charge states 25 In Fig. 2, we build upon the established fundamental characteristics of an isolated DB to demonstrate the step-by-step fabrication and characterization of a DB pair and the biasing of that pair by a negative charge positioned nearby.…”

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Binary atomic silicon logic

et al. 2018

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It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules and atoms on surfaces, challenges with patterning and limited thermal stability have remained.Here we make progress toward those challenges and demonstrate rudimentary circuit elements through the patterning of dangling bonds on a hydrogen-terminated silicon surface. Dangling bonds sequester electrons both spatially and energetically in the bulk band gap, circumventing short-circuiting by the substrate. We deploy paired dangling bonds occupied by one moveable electron to form a binary electronic building block.Inspired by earlier quantum dot-based approaches, binary information is encoded in the electron position allowing demonstration of a "binary wire" and an OR gate.The prospect of atom scale computing was initially indicated by "molecular cascades"where sequentially toppling molecules were arranged in precise configurations to achieve binary logic functions 1 . Many notable approaches toward molecular electronics 2-7 , atomic electronics 8,9 , and quantum-dot-based electronics 10-15 have also been explored.The quantum dot based approaches [16][17][18][19][20] are particularly attractive, as they provide a low power yet fast basis 21 to go beyond today's CMOS technology 22 . These approaches, however, require cryogenic temperatures to minimize the population of thermally-excited states and achieve the desired functionality. Variability among quantum dots and sensitivity to uncontrolled fields are

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Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

Cited by 18 publications

References 49 publications

Ionic charge distributions in silicon atomic surface wires

Ionic charge distributions in silicon atomic surface wires

Electrostatic Landscape of a Hydrogen-Terminated Silicon Surface Probed by a Moveable Quantum Dot

Binary atomic silicon logic

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