Resists for Helium Ion Beam Lithography: Recent Advances

Kiran, Nagarjuna Ravi; Chauhan, Manvendra Singh; Sharma, Satinder K.; Ghosh, Subrata; Gonsalves, Kenneth E.

doi:10.1021/acsaelm.0c00627

Cited by 20 publications

(18 citation statements)

References 84 publications

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“…A small LER of ∼2 nm is achieved in all patterns. While the resolution achieved in this work is at the same level with the best results in previous reports, the pattern quality is better than most of the reported materials at similar pattern size …”

supporting

confidence: 73%

“…While the resolution achieved in this work is at the same level with the best results in previous reports, the pattern quality is better than most of the reported materials at similar pattern size. 47 Atomic Resolution Imaging of C 60 -Bipy-Pt Film. With the nanoscale patterning capability, it is of interest to investigate the metal distribution within the patterned structures.…”

mentioning

confidence: 99%

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A Fullerene–Platinum Complex for Direct Functional Patterning of Single Metal Atom-Embedded Carbon Nanostructures

Yang

Chen

et al. 2022

J. Phys. Chem. Lett.

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The development of patterning materials (“resists”) at the nanoscale involves two distinct trends: one is toward high sensitivity and resolution for miniaturization, the other aims at functionalization of the resists to realize bottom-up construction of distinct nanoarchitectures. Patterning of carbon nanostructures, a seemingly ideal application for organic functional resists, has been highly reliant on complicated pattern transfer processes because of a lack of patternable precursors. Herein, we present a fullerene–metal coordination complex as a fabrication material for direct functional patterning of sub-10 nm metal-containing carbon structures. The attachment of one platinum atom per fullerene molecule not only leads to significant improvement of sensitivity and resolution but also enables stable atomic dispersion of the platinum ions within the carbon matrix, which may gain fundamentally new interest in functional patterning of hierarchical carbon nanostructures.

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confidence: 73%

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confidence: 99%

A Fullerene–Platinum Complex for Direct Functional Patterning of Single Metal Atom-Embedded Carbon Nanostructures

Yang

Chen

et al. 2022

J. Phys. Chem. Lett.

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“…The HIBL technique is an emerging patterning technique that uses a high-intensity, sub-nm focused beam of helium ions and is believed to be promising to deliver nanopatterns beyond the capabilities of conventional EBL. ,,− Having tested the performance of NMeBTA resist in the EBL, we advanced our studies to explore its potential in HIBL.…”

Section: Resultsmentioning

confidence: 99%

Macrocycle Network-Aided Nanopatterning of Inorganic Resists on Silicon

Nandi

Khillare

Moinuddin

et al. 2022

ACS Appl. Nano Mater.

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Inorganic resists have emerged as promising candidates in semiconductor industries to realize sub-10 nm node technology. However, controlling vertical shrinkage of resist films during the pattern development process, particularly for ultralow thin film applications, is among the highly pressing limitations of inorganic resists along with pattern roughness and poor resist shelf-life characteristics. Tin-based clusters and small molecules have been recently introduced as resist materials. They possess a high absorption coefficient and fast solubility transitions under irradiation exposure. As we investigated, n-butylstannoic acid (BTA) showed ∼38% vertical shrinkage when its film was exposed with deep ultraviolet photons (DUV, ∼254 nm) and could pattern features of ∼120 nm. We hypothesized and experimentally validated an approach that provided control on shrinkage issues, along with improving its patterning potential to sub-15 nm regime. In our approach, BTA was embedded into a polyhydroxy organic host matrix composed of noria (water-wheel-like macrocycle) derivatives. The rigid molecular cage structure and photo-inert nature of noria (N-Me) were utilized as the host matrix that apprehended the inorganic resist material within its intermolecular space. Ultrathin films (∼20 nm) were coated on silicon, and various nanofeatures including 10 nm lines, meshlike grids with 10 nm width, complex patterns, and so forth were patterned using electron beam and helium ion beam lithography. Most importantly, we were able to drastically reduce the vertical shrinkage to ∼13% with respect to initial thickness, which substantiates the potential of our hypothesis. We also noticed good shelf-life (6 months), good etch resistance, and low line edge roughness (LER)/line width roughness (LWR) for the developed resist composition.

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“…Herein, we demonstrate the potential of an organotin-based cage-like network (Sn–CT) as an inorganic resist system for sub-10 nm patterning (Figure ). In general, at the developmental phase, the resists for EUVL are often screened initially with electron beam lithography (EBL) and helium ion beam lithography (HIBL) to evaluate the patterning potential. − ,− …”

Section: Introductionmentioning

confidence: 99%

Induced Chemical Networking of Organometallic Tin in a Cyclic Framework for Sub-10 nm Patterning and Interconnect Application

Nandi

Khillare

Kumar

et al. 2023

ACS Appl. Nano Mater.

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Given the need for advanced resist materials in view of fast shrinkage of semiconductor node scaling, this work demonstrates the lithography application of an organotin-based cyclotrimeric species (Sn−CT) as a molecular resist for sub-10 nm patterning using electron beam lithography (EBL) and helium ion beam lithography (HIBL) techniques. While the resist has been successfully used for patterning ∼15 nm line/space features and ∼9 nm discrete line features at a dose of 2.5 mC/cm 2 using EBL, ∼15 nm line/space features were printed on silicon at a dose of 16 μC/cm 2 using HIBL. Moreover, Sn−CT has also been used for patterning complex features at a single nanometer regime such as real-scale device designs at ∼7 nm structure on silicon. A mechanistic study using X-ray photoelectron spectroscopy (XPS) revealed the formation of Sn−O−Sn and Sn−OH networks along with the loss of carbon-based group(s) upon radiation exposure, resulting in the generation of insoluble products in the exposed region, which becomes the basis of polarity switching and hence pattern development. The resist was found to have good etch resistance with respect to silicon. Moreover, Sn−CT has been explored as a good gap-filling material for silicon (Si) front-end devices and interconnects due to its low-κ dielectric (∼1.9) and high diffusion barrier properties.

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Resists for Helium Ion Beam Lithography: Recent Advances

Cited by 20 publications

References 84 publications

A Fullerene–Platinum Complex for Direct Functional Patterning of Single Metal Atom-Embedded Carbon Nanostructures

A Fullerene–Platinum Complex for Direct Functional Patterning of Single Metal Atom-Embedded Carbon Nanostructures

Macrocycle Network-Aided Nanopatterning of Inorganic Resists on Silicon

Induced Chemical Networking of Organometallic Tin in a Cyclic Framework for Sub-10 nm Patterning and Interconnect Application

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