Resistivity, oxidation kinetics and diffusion barrier properties of thin film ZrB2

Shappirio, J. R.; Finnegan, J. J.; Lux, R. A.; Fox, D. C.

doi:10.1016/0040-6090(84)90154-8

Cited by 38 publications

(10 citation statements)

References 7 publications

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“…42 We believe that the removal of O 2 from the ZrB 2 /SiC interface similarly occurs in the form of oxides such as B 2 O 3 or H 3 BO 3 known to be volatile at 300°C. 43 As the presence of impurities such as O 2 at the interface is known to contribute to undesirable electrical characteristics, this removal of O 2 is possibly the main reason for the improvement of the Schottky characteristics we have observed. In addition, Zr is known to be quite reactive with oxygen, and in this case, it may also be gettering oxygen from the heated SiC surface.…”

Section: Resultsmentioning

confidence: 75%

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Oder

Martin

Adedeji

et al. 2007

Journal of Elec Materi

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We report on improved electrical properties and thermal stability of ZrB 2 Schottky contacts deposited on n-type 4H-SiC at temperatures between 20°C and 800°C. The Schottky barrier heights (SBHs) determined by current-voltage measurements increased with deposition temperature, from 0.87 eV for contacts deposited at 20°C to 1.07 eV for those deposited at 600°C. The Rutherford backscattering spectroscopy (RBS) spectra of these contacts revealed a decrease in oxygen peak with an increase in the deposition temperature and showed no reaction at the ZrB 2 /SiC interface. These results indicate improved electrical and thermal properties of ZrB 2 /SiC Schottky contacts, making them attractive for high-temperature applications.

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Section: Resultsmentioning

confidence: 75%

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Oder

Martin

Adedeji

et al. 2007

Journal of Elec Materi

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“…Below 1200 K, liquid B 2 O 3 forms a continuous layer that wets the ZrO 2 and the underlying ZrB 2 . The B 2 O 3 (l) ‡ layer acts as a barrier to oxygen diffusion resulting in passive oxidation of ZrB 2 and parabolic (diffusion‐limited or t 1/2 ) oxidation kinetics 9–11 . At intermediate temperatures (1200–1700 K), the rates of formation and volatilization of B 2 O 3 (l) are similar, resulting in para‐linear kinetics because of competition between mass gain (ZrO 2 and B 2 O 3 formation) and mass loss (B 2 O 3 vaporization) 12,13 .…”

Section: Introductionmentioning

confidence: 99%

The ZrB₂ Volatility Diagram

Fahrenholtz

2005

Journal of the American Ceramic Society

229

134

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A volatility diagram was calculated for temperatures of 1000, 1800, and 2500 K to understand the oxidation of ZrB2. Applying the diagram, it can be seen that exposure of ZrB2 to air produces ZrO2 (cr) and B2O3 (l) over the temperature range considered. The pressure of the predominant vapor species was predicted to increase from ∼10−6 Pa at 1000 K, to 344 Pa at 1800 K, and to ∼105 Pa at 2500 K. Predictions were consistent with experimental observations that ZrB2 exhibits passive oxidation below 1200 K, but undergoes active oxidation at higher temperatures due to B2O3 (l) evaporation.

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“…21,22 We propose that in the boride contacts we have studied, oxygen similarly escapes by way of oxides such as B 2 O 3 or H 3 BO 3 known to be volatile at 300°C, when these borides are deposited on SiC substrates held at 400°C and above. 23 Since the presence of impurities such as oxygen at the interface is known to contribute to undesirable electrical characteristics, the improvement in the barrier properties of the boride/SiC contacts is possibly due to the escape of oxygen from the metal/SiC interface. It is also possible that the deposition of the boride films on SiC at different temperatures may lead to films with differences in composition, crystalline structure, and conductivity.…”

Section: ͑2͒mentioning

confidence: 99%

Ideal SiC Schottky barrier diodes fabricated using refractory metal borides

Oder¹,

Sutphin²,

Kummari³

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Several refractory metal borides were used as Schottky contacts to fabricate n-type 4H-SiC Schottky diodes. The boride contacts were deposited on SiC substrates held at 20 and 600 °C. Contacts deposited on substrates held at 600 °C produced better diodes with smaller ideality factors from 1.05 to 1.10, barrier heights from 0.94 to 1.15 eV, smaller leakage current densities at a reverse bias of 15 V, and smaller specific on-resistances compared to contacts deposited on substrates held at 20 °C, and these values remained essentially unchanged after annealing at 600 °C for 20 min. The Rutherford backscattering spectroscopy spectra of one of these boride contacts revealed a systematic decrease in oxygen with an increase in the deposition temperature. The improved electrical properties and thermal stability make these boride contacts attractive for high power and high temperature device applications.

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Resistivity, oxidation kinetics and diffusion barrier properties of thin film ZrB2

Cited by 38 publications

References 7 publications

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

The ZrB₂ Volatility Diagram

Ideal SiC Schottky barrier diodes fabricated using refractory metal borides

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Resistivity, oxidation kinetics and diffusion barrier properties of thin film ZrB2

Cited by 38 publications

References 7 publications

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

The ZrB2 Volatility Diagram

Ideal SiC Schottky barrier diodes fabricated using refractory metal borides

Contact Info

Product

Resources

About

The ZrB₂ Volatility Diagram