Resistivity of Weyl semimetals NbP and TaP under pressure

Einaga, Mari; Shimizu, Katsuya; Hu, Jin; Mao, Zhiqiang; Politano, Antonio

doi:10.1002/pssr.201700182

Cited by 8 publications

(5 citation statements)

References 43 publications

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“…This signi fies the change in the electronic structure after ∼12 GPa. In another study by Einaga et al [27] on the same family of Weyl semimetals NbP and TaP, a similar trend was observed and the anomalous behavior of resistivity was associated with the decrease of density of states corresponding to Weyl points, located around the Fermi energy. The reason for the slight dif ference between the transition pressure in resistivity data and P Nb c might be due to the enhanced sensitivity of the former to changes in the electronic structure (to be discussed later) as compared to the phonon frequencies.…”

Section: Resultssupporting

confidence: 63%

Pressure-induced Lifshitz and structural transitions in NbAs and TaAs: experiments and theory

Gupta

Singh

Pal

et al. 2018

J. Phys.: Condens. Matter

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High pressure Raman, resistivity and synchrotron x-ray diffraction studies on Weyl semimetals NbAs and TaAs have been carried out along with density functional theoretical (DFT) analysis to explain pressure induced structural and electronic topological phase transitions. The frequencies of first order Raman modes harden with increasing pressure, exhibiting a slope change at [Formula: see text] GPa for NbAs and [Formula: see text] GPa for TaAs. The resistivities of NbAs and TaAs exhibit a minimum at pressures close to these transition pressures and also a change in the bulk modulus is observed. Our first-principles calculations reveal that the transition is associated with an electronic Lifshitz transition at [Formula: see text] for NbAs while it is a structural phase transition from body centered tetragonal to hexagonal phase at [Formula: see text] for TaAs. Further, our DFT calculations show a structural phase transition at 24 GPa from body centered tetragonal phase to hexagonal phase.

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Section: Resultssupporting

confidence: 63%

Pressure-induced Lifshitz and structural transitions in NbAs and TaAs: experiments and theory

Gupta

Singh

Pal

et al. 2018

J. Phys.: Condens. Matter

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“…Electrical transport data provide, in addition to the information on the Fermisurface extracted from Shubnikov-de Haas (SdH) oscillations, access on the density and mobility of the charge carriers. So far, there have been only a few studies on the effect of pressure on the electrical-transport properties of the TaAs-family, NbAs, 26,27 NbP, [28][29][30] and TaAs. 31 In all these studies the crystalline and electronic structure are shown to be very stable.…”

Section: Introductionmentioning

confidence: 99%

Pressure tuning of the electrical transport properties in the Weyl semimetal TaP

Besser

Reis

Fan

et al. 2019

Phys. Rev. Materials

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We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall and longitudinal conductivity data in a two-band model revealed an only weak decrease in the electron-and hole charge-carrier densities up to 1.2 GPa, while the mobilities are essentially pressure independent along the a-direction of the tetragonal crystal structure. Only weak changes in the SdH frequencies for B a and B c point at a robust Fermi-surface topology. In contrast to the stability of the Fermi-surface topology and of the density of charge carriers, our results evidence a strong pressure variation of the magnitude of transverse magnetoresistance for B a contrary to the results for B c. We can relate the former to an increase in the charge-carrier mobilities along the crystallographic c-direction.

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“…For example, both the carrier doping and external pressure are known to engineer the Fermi surface of these compounds (e.g., Refs. 10,44,[48][49][50].…”

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confidence: 99%

Berry curvature dipole in Weyl semimetal materials: An ab initio study

2018

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Noncentrosymmetric metals are anticipated to exhibit a dc photocurrent in the nonlinear optical response caused by the Berry curvature dipole in momentum space. Weyl semimetals (WSMs) are expected to be excellent candidates for observing these nonlinear effects because they carry a large Berry curvature concentrated in small regions, i.e., near the Weyl points. We have implemented the semiclassical Berry curvature dipole formalism into an ab initio scheme and investigated the second-order nonlinear response for two representative groups of materials: the TaAs-family type-I WSMs and MoTe2-family type-II WSMs. Both types of WSMs exhibited a Berry curvature dipole, in which type-II Weyl points are usually superior to the type-I because of the strong tilt. Corresponding nonlinear susceptibilities in several materials promise a nonlinear Hall effect in the dc field limit, which is within the experimentally detectable range. [31][32][33][34] studies have revealed giant nonlinear optical responses in inversion-symmetry-breaking WSMs, such as the photocurrent from the circular photogalvanic effect (CPGE), second harmonic generation (SHG), and nonlinear Hall effect. These nonlinear effects can be much stronger in WSMs than traditional electro-optic materials owing to the large Berry curvature [22,35,36]. Introduction -

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Resistivity of Weyl semimetals NbP and TaP under pressure

Cited by 8 publications

References 43 publications

Pressure-induced Lifshitz and structural transitions in NbAs and TaAs: experiments and theory

Pressure-induced Lifshitz and structural transitions in NbAs and TaAs: experiments and theory

Pressure tuning of the electrical transport properties in the Weyl semimetal TaP

Berry curvature dipole in Weyl semimetal materials: An ab initio study

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