Resistivity of high-Tc superconductors: Linear in T at constant P, non-linear at constant V

Sundqvist, Bertil; Andersson, Britt M.

doi:10.1016/0038-1098(90)90076-n

Cited by 30 publications

(5 citation statements)

References 31 publications

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“…Similar to these results, infrared reflectivity measurements suggest that a gap develops in the normal state of the hole-doped HTSC [8][9][10]. Furthermore, studies found good agreement for the temperatures at which drastic changes occur in the resistivity [11,12], Hall coefficient [13][14][15], and magnetic susceptibility [16]. Considering these results, the PG temperature T * has been placed in the generic phase diagram of the hole-doped HTSC as a characteristic temperature distinct from T c [17].…”

Section: Introductionsupporting

confidence: 58%

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Pseudogap formation due to charge-transfer transition and Kondo effect

Koikegami¹

2023

J. Phys.: Condens. Matter

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We investigate the doping evolution of the electronic state of the three-band t-J-U model considering the normal state of the hole-doped high-Tc superconducting cuprate. In our model, when some number of holes are doped into the undoped state, the d electron exhibits the charge-transfer-type Mott-Hubbard transition along with a chemical potential jump. A reduced charge-transfer gap is formed from the p band and the coherent component of the d band, and it shrinks due to charge ﬂuctuations as more holes are doped as in the pseudogap phenomenon. This trend is reinforced as the d-p band hybridization is increased, and a Fermi liquid state is retrieved as in the Kondo eﬀect. These suggest that the pseudogap in the hole-doped cuprate emerges due to the charge-transfer transition and the Kondo eﬀect.

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Section: Introductionsupporting

confidence: 58%

“…As well as h pd , we regard n d as a given parameter and solve equations ( 6), (7), and ( 9)- (11) to determine t and the number of doped holes δ 0 h for the ground state of H 0 , where:…”

Section: Formulationmentioning

confidence: 99%

Pseudogap formation due to charge-transfer transition and Kondo effect

Koikegami¹

2023

J. Phys.: Condens. Matter

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“…[19][20][21] Alternative explanations of the resistivity saturation have been proposed in-cluding thermal smearing in superconducting compounds characterized by sharp structures in the density of states near the Fermi level, 22 unusual phonon anharmonicity, 23 phonon mode softening, 24 and thermal expansion of the lattice. 25 More recently Millis 16 proposed a model based on the breakdown of Migdal approximation for large electron-lattice coupling that well accounts for most experimental observations. All these possible mechanisms were extensively reviewed by Gunnarsson et al 26 The same authors 26,27 introduced a new approach, and calculated the resistivity behavior in the limit of very strong scattering, linking the latter to the behavior of the optical conductivity ͑͒.…”

Section: Introductionmentioning

confidence: 96%

Nonsaturating linear resistivity up to 900 K inMgB2

Pallecchi¹,

Belfortini

Canepa

et al. 2009

Phys. Rev. B

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In this work, we report resistivity measurements on MgB 2 polycrystalline samples with increasing degree of doping ͑disorder͒ up to temperatures higher than 900 K. In all cases the normal state curves are linear with increasing temperatures, with no sign of flattening or downward bending ͑saturation͒ at high temperature. This behavior, in sharp contrast to what is observed in superconducting compounds such as A15 and Chevrel phases, can be explained considering the dominant contribution to the electric conduction, together with the smaller electron-phonon coupling of carriers in MgB 2 , as compared to characteristic coupling strength of those compounds. This indicates that in MgB 2 the disorder introduced in the lattice by thermal oscillations even at 900 K can still be considered as a perturbation within the Boltzmann description of transport.

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“…An important observation is that all measurements so far reported for the resistivity of doped fullerenes have been performed at constant sample pressure, p~(T), whereas most theoretical treatments assume constant sample volume, p"(T). Differences between pp(T) and p"(T) have been shown to be important in other compounds including the high T, oxide superconductors [10,11]and organic conductors.…”

mentioning

confidence: 99%

Linear Temperature Dependent Resistivity at Constant Volume inRb3C60
Vareka
¹
,
Zettl
²

1994
Phys. Rev. Lett.
51
6
22
0
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The normal-state electrical resistivity p of the superconductor Rb3C60 has been measured as a function of temperature and hydrostatic pressure. Under conditions of constant sample volume we find a linear temperature dependence, p -T, in sharp contrast to p -T observed under conditions of constant sample pressure. The pressure dependence of p at fixed temperature is exponential, with a reduction in p by more than 50% for 8 kbar at room temperature. Implications for the normal-state scattering mechanism are discussed. PACS numbers: 72.15.Eb, 62.50.+p, 74.70.Wz The discovery of superconductivity in the alkalidoped fullerenes [1,2] has resulted in materials with the highest T, 's known for any three dimensional superconductors. Consequently, there has been an extensive theoretical and experimental effort to understand both the superconducting and normal-state properties of these compounds.As of yet, however, many fundamental questions about the nature of these materials remain unanswered.In particular, the role of electron-phonon scattering versus electron-electron correlation effects in determining the normal-state electrical transport behavior has not yet been resolved.Previous studies [3 -7] have shown that the temperature dependence of the resistivity for the doped fullerenes varies as p(T) =a+ bT from T = 100 K to well above room temperature. For a typical metal, the electron-phonon (el-ph) scattering mechanism is expected to dominate for temperatures Tẽ z (the Debye temperature) resulting in a linear temperature dependence of the resistivity. The presence of a T -like dependence could be evidence for some other scattering mechanism, e. g., electron-electron scattering. However, the combination of high and low frequency phonons may also mimic this behavior [8,9]. An important observation is that all measurements so far reported for the resistivity of doped fullerenes have been performed at constant sample pressure, p~(T), whereas most theoretical treatments assume constant sample volume, p"(T). Differences between pp(T) and p"(T) have been shown to be important in other compounds including the high T, oxide superconductors [10, 11]and organic conductors.Given that the compressibility~of the representative material Rb3C60 is comparable to the c-axis compressibility of graphite [12], one is naturally led to the question of how important the volume dependence of the resistivity in this material is.In this Letter we show that external hydrostatic pressure has a significant influence on the normal-state resistivity of Rb3C60. At fixed temperature, the resistivity decreases exponentially with increasing pressure. Remarkably, this sensitive lattice constant dependence leads to a constantvolume resistivity that varies linearly with temperature.The single-crystal R13C6p samples used in this study were prepared following the method outlined in Ref. [3].Previous studies have demonstrated [5] that the overall normalized constant-pressure resistivity p~( T) of Rb3C6p crystals near optimal doping is very reproducible from...

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Resistivity of high-Tc superconductors: Linear in T at constant P, non-linear at constant V

Cited by 30 publications

References 31 publications

Pseudogap formation due to charge-transfer transition and Kondo effect

Pseudogap formation due to charge-transfer transition and Kondo effect

Nonsaturating linear resistivity up to 900 K inMgB2

Linear Temperature Dependent Resistivity at Constant Volume inRb3C60
Vareka
¹
,
Zettl
²

1994
Phys. Rev. Lett.
51
6
22
0
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Resistivity of high-Tc superconductors: Linear in T at constant P, non-linear at constant V

Cited by 30 publications

References 31 publications

Pseudogap formation due to charge-transfer transition and Kondo effect

Pseudogap formation due to charge-transfer transition and Kondo effect

Nonsaturating linear resistivity up to 900 K inMgB2

Linear Temperature Dependent Resistivity at Constant Volume inRb3C60Vareka1, Zettl2 1994Phys. Rev. Lett.516220View full textAdd to dashboardCite

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Linear Temperature Dependent Resistivity at Constant Volume inRb3C60
Vareka
¹
,
Zettl
²

1994
Phys. Rev. Lett.
51
6
22
0
View full text Add to dashboard Cite