Resistivity of Bulk Silicon and of Diffused Layers in Silicon

Abstract

Measurements of resistivity and impurity concentration in heavily doped silicon are reported. These and previously published data are incorporated in a graph showing the resistivity (at T = 300 0 K ) of n-and p-type silicon as a function of donor or acceptor concentration.The relationship between surface concentration and average conductivity of diffused layers in silicon has been calculated for Gaussian and complementary error function distributions. The results are shown graphically. Similar calculations for subsurface layers, such as a transistor base region, are also given.

Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

“…Numerous experimental data on the minority and majority carrier mobility in both p and n-type silicon over a wide range of temperatures have been published, mostly as a function of the dopant concentration [3]- [8]. However, data for the electron and hole mobility sum as a function of excess carrier density available to date have only been measured at room temperature [9]- [12].…”

The Synthesis of Nano-Crystalline Metal Oxides by Solution Method

“…The increase in the number of scattering centers with addition of more antimony increases the amount of ionized impurity scattering and correspondingly decreases the carrier mobilities, which in turn increases the resistivity. Especially, the heavy doping will result in Burstein-Moss effects, which cause the bandgap to become wider (Cao et al, 1998;Irvin, 1962). Figure 14 shows the resistivity of Sb-doped SnO2 as a function of temperature.…”

The structures of some charge-transfer complexes containing TCNQ as acceptor and their electrical anisotropy

“…In the latter case nearly parallelepiped-shaped crystals were used for voltage (U) and resistance (R) measurements. With very thin 'whisker' crystals (~0.05 x 0.05 x 5 mm) the four-point method (Irvin, 1962;van der Pauw, 1961), slightly modified, was used. Particularly good whiskers were obtained for DTE :TCNQ by recrystallizing from dichloroethane in an electrostatic field of about 5000 V cm-~; for the others the electrostatic field showed no influence.…”