Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Laube, J.; Nübling, D.; Beh, Holger; Gutsch, Sebastian; Hiller, Daniel; Zacharias, Margit

doi:10.1016/j.tsf.2016.02.060

Cited by 32 publications

(26 citation statements)

References 32 publications

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“…As mentioned before, post‐deposition annealings usually only increase film resistivity. Since the origin of conductivity is attributed to hydrogen and since the decrease of conductivity in ALD‐ZnO is attributed to the effusion of hydrogen, the only kind of post‐deposition annealing that would possibly make sense is in hydrogen atmosphere at low temperature, which could either implement additional hydrogen or create new shallow hydrogen donors out of already existent hydrogen from the deposition.…”

Section: Resultsmentioning

confidence: 99%

“…Post-deposition annealing was also found to only increase the resistivity of highly conductive ALD films. [11] So, generally the question arises if it is possible to optimize the film properties of ALD-ZnO by altering any of the three above mentioned points. In this manuscript we address this question by (i) the use of an alternative precursor: dimethylzinc (DMZ), (ii) variations of the precursor dose times and purge times, and (iii) a long-term post-deposition annealing in hydrogen atmosphere.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

Beh¹,

Hiller²,

Zacharias³

2018

Physica Status Solidi (a)

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Zinc oxide (ZnO) fabricated by atomic layer deposition (ALD) is a promising material to replace tin‐doped indium oxide (ITO) as standard transparent conductive oxide (TCO). However, its conductivity is still often about one order of magnitude below that of ITO. Variations in precursor choice, deposition process parameters, and post‐processing of ALD‐ZnO are tested concerning their impact in improvement of the TCO performance. Replacing the conventional diethylzinc (DEZ) with dimethylzinc (DMZ) as well as post‐deposition annealing in H2 yields no improvement for the highly conductive films (<10 mΩ cm) deposited at around 200 °C. However, reducing the purge time of the ALD process from 10 s down to 1 s and simultaneously increasing the DEZ pulse duration leads to a reduction in resistivity from 7.6 mΩ cm to 2.8 mΩcm. Furthermore, this process optimization involves a reduction of the total deposition time by almost one order of magnitude.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

Beh¹,

Hiller²,

Zacharias³

2018

Physica Status Solidi (a)

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“…Among n-type TCOs, indium tin oxide (ITO) is already widely used in flat panel displays, touch screens or light emitting diodes. Nonetheless the high cost of indium and its toxicity reclaim alternative solutions and at the moment the most promising one seems to be the zinc oxide (ZnO), a direct bandgap semiconductor with suitable electrical and optical properties (Eg = 3.4 eV [7], transmittance above 80% in the visible region [8][9][10]), high chemical resistance and low fabrication cost compared with ITO. ZnO, in its undoped or doped forms (Al:ZnO or Ga:ZnO) starts already to find their way into applications [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Transparent p-Cu0.66Cr1.33O2/n-ZnO heterojunction prepared in a five-step scalable process

Afonso

Leturcq

Popa

et al. 2018

J Mater Sci: Mater Electron

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Transparent and electrical conducting p-type off-stoichiometric copper-chromium oxide thin films were used to build p-Cu 0.66 Cr 1.33 O 2 /n-ZnO heterojunctions. The junctions were fabricated in a novel and simple five step process including metal organic chemical vapour deposition, atomic layer deposition, chemical wet etching, and optical lithography. One last step of thermal annealing, with varying temperatures of 650 and 700 °C, is added in order to tune the electrical properties of delafossite and consequently the electrical features of p-n junctions. This work was developed to address the lack of transparent and industrially scalable rectifying p-n junctions that can open multiple application paths in transparent electronics. A competitive ideality factor η of 6.6 and a transmittance in the visible range of 50% were achieved. An understanding of the electronic response of junctions is presented herein as well as a deepening comprehension of the physical properties of materials, with the bands alignment and the Fermi level tuning.

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“…In a previous paper, our group investigated the influence of a post-annealing treatment on the resistivity. However, as shown in [35], exposing the sample to an additional low temperature post-annealing step does not influence the resistivity significantly. As a result, we concentrated on increasing the resistivity by decreasing the deposition temperature during the atomic layer deposition process.…”

mentioning

confidence: 89%

Flexible thin film pH sensor based on low‐temperature atomic layer deposition

Jakob

Gutsch

Chatelle

et al. 2017

Physica Rapid Research Ltrs

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Flexible and transparent zinc oxide (ZnO) thin film field-effect transistors (TF-FET) for the use as small volume potentiometric pH sensors are developed. Low temperature atomic layer deposition (ALD) is used for the fabrication of the metal oxides ZnO and aluminum dioxide (Al2O3). Changing the deposition temperature of the ZnO from 150 to 100 °C allowed a significant increase in resistivity by four orders of magnitude. Hence, adjusting the controlled low carrier concentration for the field-effect based sensor is demonstrated. ZnO TF-FET pH sensors fabricated on silicon/silicon dioxide (Si/SiO2) substrates are compared with sensors based on flexible and transparent polyethylene naphthalate (PEN) foil substrates. Comparison of both types of pH sensors showed successful pH sensitivity for pH ranging from 5 to 10 in both cases

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Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Cited by 32 publications

References 32 publications

Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

Transparent p-Cu0.66Cr1.33O2/n-ZnO heterojunction prepared in a five-step scalable process

Flexible thin film pH sensor based on low‐temperature atomic layer deposition

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