1988
DOI: 10.1103/physrevlett.61.2364
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Resistivity of a Simple Metal from Room Temperature to106K

Abstract: The resistivity of nearly solid-density Al was measured as a function of temperature over 4 orders of magnitude above ambient by observing the self-reflection of an intense, <0.5 psec, 308-nm light pulse incident on a planar Al target. As an increasing function of electron temperature, the resistivity is observed initially to increase, reach a maximum which is relatively constant over an extended temperature range, and then decrease at the highest temperatures. The broad maximum is interpreted as "resistivity … Show more

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Cited by 425 publications
(178 citation statements)
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“…Moreover, we do not think that the simulations can overestimate the amount of laser energy absorbed sufficiently to explain the discrepancy, since this quantity is in good general agreement with the available experimental data obtained for somewhat different laser parameters. 35 We believe that the observed attenuation is likely due to the high pressure generated in the solid by the 80-fs laser pulse. In the numerical model, the generated compressive stresses reach values in excess of 10 GPa near the ablation threshold.…”
Section: B Displacement Amplitudesmentioning
confidence: 99%
“…Moreover, we do not think that the simulations can overestimate the amount of laser energy absorbed sufficiently to explain the discrepancy, since this quantity is in good general agreement with the available experimental data obtained for somewhat different laser parameters. 35 We believe that the observed attenuation is likely due to the high pressure generated in the solid by the 80-fs laser pulse. In the numerical model, the generated compressive stresses reach values in excess of 10 GPa near the ablation threshold.…”
Section: B Displacement Amplitudesmentioning
confidence: 99%
“…[2], and also Faussurier et al [29]) have proposed an explanation in terms of resistivity saturation, as in Mott's theory of minimum conductance in semiconductors. The electron "mean-free path" λ =vτ mr , wherev is a mean electron velocity, is claimed to reduce to the mean interatomic distance at resistivity saturation.…”
Section: B Isochoric Conductivitymentioning
confidence: 99%
“…These provide information needed for understanding normal matter and unusual states of matter, in equilibrium or in transient conditions [1,2]. Similar 'hot-carrier' processes occur in semiconductor nanostructures [3,4].…”
Section: Introductionmentioning
confidence: 99%
“…However, the comprehension of these phenomena in the context of ultrafast interaction is essential not only for fundamental purposes but also for micromachining applications. A precise description of the effect of the electronic temperature on the absorption seems to be still unsettled 19,20,21 , and it has not been taken into account in the presented calculations. Nevertheless, the model employed in this work uses a large set of current available data.…”
Section: Introductionmentioning
confidence: 99%