Resistivity Minimum Behavior and Weak Magnetic Disorder Characteristics in La2/3Ca1/3MnO3 Manganites

Intrinsic and precipitate-induced quantum corrections to conductivity in La2/3Sr1/3MnOGao1, Cao2, Zhang3 et al. 2012Phys. Rev. BSelf Cite

“…[1][2][3][4][5][6] In the past decade, several papers have been published claiming the presence of quantum interference effects in the low temperature region of the magnetotransport properties which give rise to resistivity minim, ρ min , below ~ 40K. [7][8][9][10] These resistivity minima-appearing to be similar to those of Kondo systems -were observed in manganite bulk ceramics, 11 polycrystalline as well as high quality epitaxially grown films and in single crystals. [12][13][14][15] Extensive experimental and theoretical work has been performed, and several mechanisms have been discussed to interpret these resistivity minima.…”

“…They interpreted their results as an interplay of EEI and localization effects, however, leaving all defect related contributions to the magnetoresistance as an open question. Chen et al 11 analysed the correlation of low temperature resistivity minima with magnetic properties for optimally doped La 0.67 Ca 0.33 MnO 3 bulk samples and related their results to e --einteraction and spin-disorder scattering. Jia et al 4 investigated effects of ferroelectric poling-induced strain on the quantum corrections to low temperature resistivity of sputtered La 0.7 Ca 0.15 Sr 0.15 MnO 3 films and interpreted the resistivity upturn in terms of QIE effects originating from inelastic scattering and e --e -interactions enhanced by disorder.…”

Grain size dependent magnetization, electrical resistivity and magnetoresistance in mechanically milled La0.67Sr0.33MnO3

“…For example, tunneling of electronic charge carriers between ferromagnetic grains through grain boundaries is well-accepted mechanism. The counter argument [24][25][26] is that additional scattering from spin disordered grain boundaries is responsible for low temperature resistivity up turn. Many reports on manganites [15,27,28] showed that the low temperature resistivity is maximum for grain size down to nanometer scale, although it is not the universal feature for all manganite nanoparticles.…”

Metallic and semi-conducting resistivity behaviour of La0.7Ca0.3−x K x MnO3 (x = 0.05, 0.1) manganites

“…An upturn in resistivity behaviour below 50 K in PBMO manganites were explained due to the combined effect of weak localization, electron-electron and electronphonon scattering [7]. An analogous analysis at low temperature well below T MI was also put forward in the La 2/ 3 Ca 1/3 MnO 3 manganites [8].…”

“…Rozenberg [9] commented on resistivity fitting of manganites at low temperature by Chen et al [8] as the claim seems to be doubtful due to the fundamental inapplicability of the existence of low temperature minimum resulting from the existence of the intrinsic spin disorder. It stressed that the spin-dependent tunnelling and scattering of carriers between grains (grain-boundary effect) account reasonably for the resistivity minima [9].…”