Resistivity measurements in silicon compressed by shock waves

Metallization of Monocrystalline Silicon under Shock Compression

“…2: the static compression dependence [6] and the results of the shock wave experiments [13,14]. The data [6] have been presented regarding the recalibration of the static pressure scale of Drickamer [17].…”

“…The solid line is a guide for the eye only. The squares mark the data by Coleburn et al [13], the triangles mark the data by Rosenberg [14] recalculated for the conductivity. The dashed line marks the static compression measurements by Bundy and Kasper [6] corrected for the modern pressure scale grating the following equation [18] over the Hugoniot adiabatic curve:…”

“…The data [6] have been presented regarding the recalibration of the static pressure scale of Drickamer [17]. The shock data [13,14] are recalculated for the conductivity on the basis of specimen dimensions and resistance.…”

“…Direct measurements show that the silicon conductivity rises monotonically with increasing pressure and reaches the conductivity of classic metals [5,6]. On the other hand, under shock compression silicon is metallized according to Coleburn et al [13] and Rosenberg [14] at stresses exceeding the Hugoniot Elastic Limit (HEL). The HEL stress is 5.6 GPa for [110] and [111] crystal directions [15].…”

Measurement of dense plasma temperature of the shock‐compressed silicon

“…[31] At lower pressures (at 11-13 GPa), its transition to the metallic state occurs, which was determined from the reflection of laser radiation [32] and by direct measurement of electrical resistance. [33,34] The entire experimental array of shock compressibility at low pressures is well described by ab initio calculations using the density functional method. [17] In this work, a multiphase semi-empirical EOS was constructed for silicon, similar to ref.…”