Resistivity effect of ZnGa2O4:Mn phosphor screen on cathodoluminescence characteristics of field emission display

Abstract

The cathodoluminescent characteristics of phosphor screens excited by cold electrons from field emitter arrays can be influenced by the resistivity of the phosphor screen. The resistivity of ZnGa 2 O 4 :Mn phosphor screens was determined experimentally and the correlation between the screen resistivity and the luminance was obtained. Addition of WO 3 to ZnGa 2 O 4 :Mn phosphor was one way of controlling the resistivity, and subsequently the luminance. In field emission displays ͑FEDs͒, the resistivity of the phosphor screen gives rise to a voltage drop on the anode side and modifies the emission characteristics of emitters, which leads to a negative effect on the luminance. The luminance has been generally expressed as LϭI anode V anode . But with the resistivity of the phosphor screen taken into consideration, it should be expressed as LϭI anode V phosphor . For either reason, the resistivity of the phosphor needs to be held as low as possible to get the maximum luminance out of FED. Experiments show that the resistivity of ZnGa 2 O 4 :Mn phosphor is typically 10 10 ⍀ cm.

Zinc gallate and its starting materials in solid state reaction route- A comparative study

“…ZnGa 2 O 4 possess better mechanical, chemical and thermal stability under high electric field and high vacuum conditions, compared to the sulfide phosphors, which emits corrosive gas under electron bombardment [7e9]. Thus it finds wide applications in low voltage field emission displays (FEDs), high definition television (HDTVs), electroluminescent devices (ELDs) and vacuum fluorescent displays (VFDs) [10,11]. Grafting SnOx on the surface of zinc gallate makes it an excellent photocatalyst [12].…”