Resistivity‐Dopant Density Relationship for Phosphorus‐Doped Silicon

Abstract

New data for the resistivity‐dopant density relationship for phosphorus‐doped silicon have been obtained for phosphorus densities between 1013 and 1020 cm−3 and temperatures of 296°K (23°C) and 300°K. For dopant densities less than 1018 cm−3, results were calculated from resistivity and junction capacitance‐voltage measurements on processed wafers. For more heavily doped material, data were obtained from Hall effect and resistivity measurements on specimens cut from bulk silicon slices. The results differ by 5–15% from the commonly used Irvin curve, always in the direction of lower dopant density for a given resistivity. For comparison with the electrical measurements, phosphorus densities were also obtained by neutron activation analysis and the photometric technique. The values from these methods were within 10% of the electrical results. Analytical fits were determined for the resistivity‐dopant density product as a function of resistivity and dopant density for temperatures of 23°C and 300°K. Similar fits were obtained for the calculated electron mobility as a function of resistivity and electron density.

Electrical properties of boron-doped p–SiGeC grown on n−–Si substrate

“…At room temperature, a mobility of 1400 cm 2 /V s was extracted, and this value agrees well with the mobility of Si for similar residual donor concentrations. 15 At the interfacial layer, the hole concentration decreases with increasing C content from 4ϫ10 12 to 7ϫ10 11 cm Ϫ2 , while the mobility increases from about 150 to 550 cm 2 /V s at 50 K. We believe that the p-type interfacial layer is generated because of the lattice mismatch between the SiGeC and Si semiconductor materials. The incorporation of C in SiGe materials reduces strain in the SiGeC films, which then reduces the dislocation density, in agreement with our observation of decreasing interfacial hole concentration as C increases.…”

Frequency-dependent conductivity of electron glasses

“…The middle column lists the ratios of the samples as a percentage of the dopant concentration in each sample relative to the critical concentration at which the MIT occurs, x c = 3.5 × 10 18 cm −3 . The final column lists the room temperature resistivity of each sample in (Ω cm) measured using an ADE 6035 resistivity gauge, which can be directly related to the dopant concentration, knowing the ilk of majority dopant in the silicon via a phenomenological scale set forth by Thurber et al 22 .…”

‘Taxonomy’ of Electron Glasses

“…Room temperature resistivity was measured using an ADE 6035 gauge and the dopant concentration calibrated using the Thurber scale [10]. The Si:P samples discussed here span a range from 39% to 69%, stated as a percentage of the sample's dopant concentration to the critical concentration at the MIT.…”