Resistivity anisotropy measured using four probes in epitaxial graphene on silicon carbide

Kobayashi, Keisuke; Tanabe, Setsuhisa; Takuto, Tao; Okumura, Takahiro; Nakashima, Takeshi; Aritsuki, Takuya; Ryong-Sok, O; Nagase, Masao

doi:10.7567/apex.8.036602

Cited by 12 publications

(14 citation statements)

References 23 publications

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“…However, this is challenging for epitaxial growth. The substrate morphology, in particular SiC terrace steps, are known to strongly deteriorate the performance of graphene-based electronics, e.g., by limiting the geometry of devices, lowering the cutoff frequency in high-speed electronics, 4 degrading carrier mobility 5 in FET devices, 6,7 or leading to anisotropies in the quantum Hall effect (QHE). 8,9 Rotational square probe measurements have quantified a conductance anisotropy of about 70% for epitaxial graphene layers grown on the Si-face of 6H-SiC.…”

Section: ■ Introductionmentioning

confidence: 99%

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

Pakdehi

Aprojanz

Susloparova

et al. 2018

ACS Appl. Mater. Interfaces

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We report on electronic transport measurements in rotational square probe configuration in combination with scanning tunneling potentiometry of epitaxial graphene monolayers which were fabricated by polymer-assisted sublimation growth on SiC substrates. The absence of bilayer graphene on the ultralow step edges of below 0.75 nm scrutinized by atomic force microscopy and scanning tunneling microscopy result in a not yet observed resistance isotropy of graphene on 4H- and 6H-SiC(0001) substrates as low as 2%. We combine microscopic electronic properties with nanoscale transport experiments and thereby disentangle the underlying microscopic scattering mechanism to explain the remaining resistance anisotropy. Eventually, this can be entirely attributed to the resistance and the number of substrate steps which induce local scattering. Thereby, our data represent the ultimate limit for resistance isotropy of epitaxial graphene on SiC for the given miscut of the substrate.

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Section: ■ Introductionmentioning

confidence: 99%

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

Pakdehi

Aprojanz

Susloparova

et al. 2018

ACS Appl. Mater. Interfaces

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“…A graphene sample was prepared by the thermal decomposition of 4H-SiC, as reported by Nagase and co-workers. [23][24][25] The sample was fabricated from a 4H-SiC(0001) substrate manufactured by Cree. The annealing condition was at 1750 °C under a pressure of 100 Torr in an argon atmosphere.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Graphene is produced by exfoliation of highly ordered pyrolytic graphite (HOPG) 21) , chemical vapor deposition 22) , and thermal decomposition of SiC under vacuum or argon pressure. Nagase and co-authors reported the synthesis of largearea, high-quality epitaxial graphene on 4H-SiC by a thermal decomposition method, along with its resistivity anisotropy [23][24][25] .…”

Section: Introductionmentioning

confidence: 99%

Microscopic Raman study of graphene on 4H-SiC two-dimensionally enhanced by surface roughness and gold nanoparticles

Matsumura

Yanagiya

Nagase

et al. 2016

Jpn. J. Appl. Phys.

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We present microscopic Raman spectroscopy measurements on single-layer graphene epitaxially grown on 4H-SiC by a thermal decomposition method. We collected spectral data with spatial resolution, which allowed us to obtain twodimensionally enhanced Raman mapping images. Shallow holes in SiC, which had areas of 5 to 20 µm and depths of 100 nm, enhanced the Raman intensity of the 2D band of graphene. A monolayer of gold nanoparticle (AuNP) aggregates was successfully prepared by dropping and drying a colloidal suspension of AuNPs. The AuNP exhibited 30-fold enhanced the Raman spectra in the wavenumber range of 1550-1700 cm −1. Locally enhanced Raman intensity was also demonstrated using a glass microbead.

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“…After cleaning, the SiC substrate was subjected to high-temperature annealing for graphene growth at 1650 °C in an Ar environment (100 Torr) using a rapid thermal annealing system (SR1800, Thermo Riko). A single-crystal and high-quality graphene sample with a large area was fabricated 27,28) . The electrical properties of this large-area sample were measured by the van der Pauw method without any device fabrication processes, such as lithography with a resist and metallization.…”

Section: Fabrication Of Graphene Samplementioning

confidence: 99%

Carrier doping effect of humidity for single-crystal graphene on SiC

Kitaoka¹,

Nagahama²,

Nakamura³

et al. 2017

Jpn. J. Appl. Phys.

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Carrier doping effects of water vapor and an adsorbed water layer on single-crystal graphene were evaluated. After annealing at 300 °C in nitrogen ambient, the sheet resistance of epitaxial graphene on a SiC substrate had a minimum value of 800 Ω/sq and the carrier density was estimated to be 1.2 × 10 13 cm-2 for an n-type dopant. The adsorbed water layer, which acted as a p-type dopant with a carrier density of-7.4 × 10 12 cm-2 , was formed by deionized (DI) water treatment. The sheet resistances of graphene samples increased with humidity, owing to the counter doping effect. The estimated p-type doping amounts of saturated water vapor were-2.5 × 10 12 cm-2 for DI-water-treated graphene and-3.5 × 10 12 cm-2 for annealed graphene.

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Resistivity anisotropy measured using four probes in epitaxial graphene on silicon carbide

Cited by 12 publications

References 23 publications

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

Microscopic Raman study of graphene on 4H-SiC two-dimensionally enhanced by surface roughness and gold nanoparticles

Carrier doping effect of humidity for single-crystal graphene on SiC

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