Resistivity and thermopower of graphene made by chemical vapor deposition technique

Abstract

Understanding charge carrier transport mechanisms in graphene fabricated by chemical vapor deposition (CVD) is important for electronic and thermal applications. We report results of structural, low temperature resistivity, and thermopower measurements in approximately four atomic layer thick centimeter size graphene. A semiconducting temperature dependence of the resistivity and a metallic temperature dependence of the thermopower in the same samples have been observed. The obtained results imply that intergranular charge carrier scattering in CVD graphene plays a major role in the electrical transport and a minor role in the thermal transport.

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

“…The graphene is synthesized by chemical vapor deposition on Si/SiO 2 /Ni substrates (details of growth can be found in Ref. 24). The graphene sheet was separated from its growth substrate by first covering the surface with a 50 nm thick PMMA layer and then by etching the Ni underlayer using FeCl 3 wet attack.…”

Electrical transport in graphene with different interface conditions

“…The synthesis and the transfer of CVD graphene layers were carried in the conditions similar to those described in [5,6].The electrical resistance of the CVD graphene was measured by the four probe method during gradual dipping the sample into liquid nitrogen. The contacts on the graphene were gold con tact areas deposited by positive photolithography.…”

Thermoelectric Power in Graphene

“…There exist a few reports of measurements of TEP of CVD-grown graphene [45,46]. Figure 8 shows the observed temperature dependences.…”